Inventor

David R. Evans

Inventor

Beaverton, OR, US

Overview

103→

Patents

1999–2019

Patent span

Electricity

Primary field (CPC H)

Patents· 103 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%

H10DInorganic electric semiconductor devices11%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%

C23CCoating metallic material10%

H10NElectric solid-state devices not otherwise provided for8%

Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution6%

G11CStatic stores5%

H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy5%

H10BElectronic memory devices5%

C07FAcyclic, carbocyclic or heterocyclic compounds containing elements other than carbon, hydrogen, halogen, oxygen, nitrogen, sulfur, selenium or tellurium2%

PatentTitleYear

10,411,286Alkali/oxidant battery2019 RE047382Back-to-back metal/semiconductor/metal (MSM) Schottky diode2019 9,774,066'Large-scale metal-air battery with slurry anode'2017 9,680,152'Transition metal hexacyanoferrate battery with carbonaceous anode'2017 9,608,264'Air cathode battery using zinc slurry anode with carbon additive'2017 9,595,706'Protected transition metal hexacyanoferrate battery electrode synthesis method'2017 9,419,278'Rechargeable metal-ion battery with non-aqueous hybrid ion electrolyte'2016 9,385,370'Transition metal hexacyanoferrate battery with single plateau charge/discharge curve'2016 9,246,164'Protected transition metal hexacyanoferrate battery electrode'2016 9,099,718'Transition metal hexacyanoferrate battery cathode with single plateau charge/discharge curve'2015 9,099,719'Hexacyanoferrate battery electrode modified with ferrocyanides or ferricyanides'2015 9,090,742'Facile synthesis of metalloporphyrin polymers'2015 9,090,743'Metalloporphyrin polymer functionalized substrate'2015 9,083,041'Transition metal hexacyanometallate-conductive polymer composite'2015 9,082,700'Ultraviolet treatment of metal oxide electrodes'2015 8,968,925'Metal-doped transition metal hexacyanoferrate (TMHCF) battery electrode'2015 8,907,081'Long wavelength absorbing porphyrin photosensitizers for dye-sensitized solar cells'2014 8,810,897'Method for improving metallic nanostructure stability'2014 8,264,081'Multilayered barrier metal thin-films'2012 7,968,419'Back-to-back metal/semiconductor/metal (MSM) Schottky diode'2011 7,714,354'Electroformed metal structure'2010 7,696,550'Bipolar switching PCMO capacitor'2010 7,633,108'Metal/semiconductor/metal current limiter'2009 7,625,595'Method of monitoring PCMO precursor synthesis'2009 7,589,464'Nanotip electrode electroluminescence device with contoured phosphor layer'2009 7,446,014'Nanoelectrochemical cell'2008 7,446,010'Metal/semiconductor/metal (MSM) back-to-back Schottky diode'2008 7,407,858'Resistance random access memory devices and method of fabrication'2008 7,405,098'Smooth surface liquid phase epitaxial germanium'2008 7,390,725'Strained silicon on insulator from film transfer and relaxation by hydrogen implantation'2008 7,364,665'Selective etching processes of SiO2 , Ti and In2 O3 thin films for FeRAM device applications'2008 7,364,989'Strain control of epitaxial oxide films using virtual substrates'2008 7,361,574'Single-crystal silicon-on-glass from film transfer'2008 7,306,962'Electroformed metallization'2007 7,271,081'Metal/ZnOx/metal current limiter'2007 7,267,996'Iridium etching for FeRAM applications'2007 7,256,429'Memory cell with buffered-layer'2007 7,241,670'Method to form relaxed SiGe layer with high Ge content using co-implantation of silicon with boron or helium and hydrogen'2007 7,235,407'System and method for forming a bipolar switching PCMO film'2007 7,214,583'Memory cell with an asymmetric crystalline structure'2007 7,205,238'Chemical mechanical polish of PCMO thin films for RRAM applications'2007 7,192,866'Source alternating MOCVD processes to deposit tungsten nitride thin films as barrier layers for MOCVD copper interconnects'2007 7,160,819'Method to perform selective atomic layer deposition of zinc oxide'2007 7,157,287'Method of substrate surface treatment for RRAM thin film deposition'2007 7,094,691'MOCVD of tungsten nitride thin films using W(CO)6 and NH3 for copper barrier applications'2006 7,060,586'PCMO thin film with resistance random access memory (RRAM) characteristics'2006 7,029,924'Buffered-layer memory cell'2006 7,029,982'Method of affecting RRAM characteristics by doping PCMO thin films'2006 7,029,944'Methods of forming a microlens array over a substrate employing a CMP stop'2006 7,015,138'Multi-layered barrier metal thin films for Cu interconnect by ALCVD'2006 7,016,094'Nonvolatile solid state electro-optic modulator'2006 6,992,025'Strained silicon on insulator from film transfer and relaxation by hydrogen implantation'2006 6,972,239'Low temperature MOCVD processes for fabrication of PrXCa1-xMnO3 thin films'2005 6,951,825'Method of etching a SiN/Ir/TaN or SiN/Ir/Ti stack using an aluminum hard mask'2005 6,939,724'Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer'2005 6,927,074'Asymmetric memory cell'2005 6,927,120'Method for forming an asymmetric crystalline structure memory cell'2005 6,899,858'Method of synthesis of hafnium nitrate for HfO2 thin film deposition via ALCVD process'2005 6,849,467'MOCVD of TiO2 thin film for use as FeRAM H2 passivation layer'2005 6,794,198'MOCVD selective deposition of c-axis oriented Pb5Ge3O11 thin films on high-k gate oxides'2004 6,777,327'Method of barrier metal surface treatment prior to Cu deposition to improve adhesion and trench filling characteristics'2004 6,774,054'High temperature annealing of spin coated Pr1-xCaxMnO3 thim film for RRAM application'2004 6,764,537'Copper metal precursor'2004 6,759,695'Integrated circuit metal oxide semiconductor transistor'2004 6,723,643'Method for chemical mechanical polishing of thin films using end-point indicator structures'2004 6,720,031'Method of controlling the initial growth of CVD copper films by surface treatment of barrier metals films'2004 6,716,691'Self-aligned shallow trench isolation process having improved polysilicon gate thickness control'2004 6,716,744'Ultra thin tungsten metal films used as adhesion promoter between barrier metals and copper'2004 6,669,870'Substituted phenylethylene precursor synthesis method'2003 6,660,628'Method of MOCVD Ti-based barrier metal thin films with tetrakis (methylethylamino) titanium with octane'2003 6,632,731'Structure and method of making a sub-micron MOS transistor'2003 6,627,510'Method of making self-aligned shallow trench isolation'2003 6,620,664'Silicon-germanium MOSFET with deposited gate dielectric and metal gate electrode and method for making the same'2003 6,596,344'Method of depositing a high-adhesive copper thin film on a metal nitride substrate'2003 6,586,344'Precursors for zirconium and hafnium oxide thin film deposition'2003 6,579,793'Method of achieving high adhesion of CVD copper thin films on TaN Substrates'2003 6,576,293'Method to improve copper thin film adhesion to metal nitride substrates by the addition of water'2003 6,576,292'Method of forming highly adhesive copper thin films on metal nitride substrates via CVD'2003 6,573,134'Dual metal gate CMOS devices and method for making the same'2003 6,555,916'Integrated circuit prepared by selectively cleaning copper substrates, in-situ, to remove copper oxides'2003 6,509,268'Thermal densification in the early stages of copper MOCVD for depositing high quality Cu films with good adhesion and trench filling characteristics'2003 6,509,260'Method of shallow trench isolation using a single mask'2003 6,506,643'Method for forming a damascene FeRAM cell structure'2003 6,472,337'Precursors for zirconium and hafnium oxide thin film deposition'2002 6,410,462'Method of making low-K carbon doped silicon oxide'2002 6,303,502'MOCVD metal oxide for one transistor memory'2001 6,290,736'Chemically active slurry for the polishing of noble metals and method for same'2001 6,281,377'Substituted cycloalkene new copper precursors for chemical vapor deposition of copper metal thin films'2001 6,281,589'System of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides'2001 6,274,421'Method of making metal gate sub-micron MOS transistor'2001 6,245,261'Substituted phenylethylene precursor and synthesis method'2001 6,200,866'Use of silicon germanium and other alloys as the replacement gate for the fabrication of MOSFET'2001 6,194,310'Method of forming amorphous conducting diffusion barriers'2001 6,184,157'Stress-loaded film and method for same'2001 6,133,106'Fabrication of a planar MOSFET with raised source/drain by chemical mechanical polishing and nitride replacement'2000 6,090,963'Alkene ligand precursor and synthesis method'2000 6,015,918'Allyl-derived precursor and synthesis method'2000 5,994,571'Substituted ethylene precursor and synthesis method'1999 5,939,334'System and method of selectively cleaning copper substrate surfaces, in-situ, to remove copper oxides'1999 5,936,707'Multi-level reticle system and method for forming multi-level resist profiles'1999 5,914,202'Method for forming a multi-level reticle'1999 5,907,762'Method of manufacture of single transistor ferroelectric memory cell using chemical-mechanical polishing'1999 5,906,910'Multi-level photoresist profile method'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2016Patents assigned to SHARP LAB OF AMERICA INC (93)· patent assignee history

1999–2001Patents assigned to SHARP KK (9)· patent assignee history

1999–2019Based in Beaverton, OR, US· patent location history

2012–2015Patents assigned to EVANS DAVID R (4)· patent assignee history

2012–2015Patents assigned to PAN WEI (3)· patent assignee history

2016–2019Patents assigned to SHARP LABORATORIES AMERICA INC (6)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SHARP LAB OF AMERICA INC	93	1999–2016
SHARP KK	9	1999–2001
SHARP LABORATORIES AMERICA INC	6	2016–2019
EVANS DAVID Rself	4	2012–2015
PAN WEI	3	2012–2015

Locations

Location	Patents	Span
Beaverton, OR, US	103	1999–2019