Inventor
Dong-Seok Suh
Inventor
Seoul, KR
Overview
Patents· 34 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Nprimary
H10NElectric solid-state devices not otherwise provided for19%
H10BElectronic memory devices18%
G11CStatic stores14%
H10DInorganic electric semiconductor devices9%
B82YSpecific uses or applications of nanostructures7%
H01GCapacitors5%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy5%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution5%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
G01CMeasuring distances, levels or bearings2%
PatentTitleYear
9,046,358'Sensor, method of operating the same, and system including the same'20158,937,711'Sensor and method using the same'20158,742,514'Storage node, phase change memory device and methods of operating and fabricating the same'20148,471,232'Resistive memory devices including vertical transistor arrays and related fabrication methods'20138,319,291'Non-volatile memory device with data storage layer'20128,218,359'Phase change random access memory and methods of manufacturing and operating same'20128,144,507'Method of measuring a resistance of a resistive memory device'20128,120,004'Storage node, phase change memory device and methods of operating and fabricating the same'20128,101,061'Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states'20128,085,583'Vertical string phase change random access memory device'20118,083,909'Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states'20118,080,149'Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states'20118,066,855'Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states'20118,054,672'Non-volatile memory device and method of operating the same'20118,049,202'Phase change memory device having phase change material layer containing phase change nano particles'20118,021,524'Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states'20118,017,929'Phase change material layers and phase change memory devices including the same'20117,956,342'Phase change material for use in a phase change random access memory, the phase change material having uniformly distributed insulating impurities'20117,897,030'Material and device properties modification by electrochemical charge injection in the absence of contacting electrolyte for either local spatial or final states'20117,872,908'Phase change memory devices and fabrication methods thereof'20117,872,250'Phase-change ram and method for fabricating the same'20117,824,953'Method of operating and structure of phase change random access memory (PRAM)'20107,763,886'Doped phase change material and pram including the same'20107,737,527'Phase change material containing carbon, memory device including the phase change material, and method of operating the memory device'20107,705,343'Phase change random access memory devices and methods of operating the same'20107,696,507'Storage nodes, phase change memory devices, and methods of manufacturing the same'20107,642,540'Phase change random access memory and method of operating the same'20107,626,859'Phase-change random access memory and programming method'20097,599,216'Phase change memory devices and fabrication methods thereof'20097,558,105'Phase change memory devices and multi-bit operating methods for the same'20097,541,633'Phase-change RAM and method for fabricating the same'20097,521,704'Memory device using multi-layer with a graded resistance change'20097,476,892'Storage node, phase change memory device and methods of operating and fabricating the same'20097,449,360'Phase change memory devices and fabrication methods thereof'2008Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2008–2015Patents assigned to SAMSUNG ELECTRONICS CO LTD (28)· patent assignee history
2008–2012Based in Seoul, KR· patent location history
2009–2012Based in Yongin-si, KR· patent location history
2011–2014Patents assigned to SUH DONG-SEOK (11)· patent assignee history
2011–2012Patents assigned to UNIV TEXAS (6)· patent assignee history
2011–2012Patents assigned to BAUGHMAN RAY HENRY (4)· patent assignee history
2011–2012Patents assigned to ZAKHIDOV ANVAR ABDULAHADOVIC (4)· patent assignee history
2012–2015Based in Hwaseong-si, KR· patent location history
2014Based in Hwasung, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 28 | 2008–2015 |
| SUH DONG-SEOKself | 11 | 2011–2014 |
| UNIV TEXAS | 6 | 2011–2012 |
| BAUGHMAN RAY HENRY | 4 | 2011–2012 |
| ZAKHIDOV ANVAR ABDULAHADOVIC | 4 | 2011–2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seoul, KR | 24 | 2008–2012 |
| Yongin-si, KR | 5 | 2009–2012 |
| Hwaseong-si, KR | 4 | 2012–2015 |
| Hwasung, KR | 1 | 2014 |