Inventor

Koichiro Yuki

Inventor

Osaka, JP

Overview

1995–2008

Patent span

Electricity

Primary field (CPC H)

Patents· 33 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices44%

B82YSpecific uses or applications of nanostructures14%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests14%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%

G11CStatic stores3%

H10BElectronic memory devices3%

PatentTitleYear

7,465,969'Bipolar transistor and method for fabricating the same'2008 7,135,721'Heterojunction bipolar transistor having reduced driving voltage requirements'2006 7,091,099'Bipolar transistor and method for fabricating the same'2006 7,049,198'Semiconductor device and method for fabricating the same'2006 6,847,063'Semiconductor device'2005 6,847,062'Semiconductor device'2005 6,821,870'Heterojunction bipolar transistor and method for fabricating the same'2004 6,759,697'Heterojunction bipolar transistor'2004 6,756,278'Lateral heterojunction bipolar transistor and method of fabricating the same'2004 6,713,790'Semiconductor device and method for fabricating the same'2004 6,674,150'Heterojunction bipolar transistor and method for fabricating the same'2004 6,597,016'Semiconductor device and method for fabricating the same'2003 6,563,146'Lateral heterojunction bipolar transistor and method of fabricating the same'2003 6,492,711'Heterojunction bipolar transistor and method for fabricating the same'2002 6,455,364'Semiconductor device and method for fabricating the same'2002 6,399,993'Semiconductor device and method for fabricating the same'2002 6,342,716'Semiconductor device having dot elements as floating gate'2002 6,303,516'Method for forming dot element'2001 6,171,905'Semiconductor device and method of manufacturing the same'2001 6,103,583'Method for producing quantization functional device'2000 6,091,077'MIS SOI semiconductor device with RTD and/or HET'2000 6,015,978'Resonance tunnel device'2000 5,972,744'Quantum effect device, method of manufacturing the same'1999 5,945,687'Quantization functional device, quantization functional apparatus utilizing the same, and method for producing the same'1999 5,888,852'Method for forming semiconductor microstructure, semiconductor device fabricated using this method, method for fabricating resonance tunneling device, and resonance tunnel device fabricated by this method'1999 5,739,544'Quantization functional device utilizing a resonance tunneling effect and method for producing the same'1998 5,562,802'Method of producing a quantum device which utilizes the quantum effect'1996 5,543,351'Method of producing electrically insulated silicon structure'1996 5,514,614'Method for producing quantization functional device utilizing a resonance tunneling effect'1996 5,486,706'Quantization functional device utilizing a resonance tunneling effect and method for producing the same'1996 5,480,492'Method for removing organic or inorganic contaminant from silicon substrate surface'1996 5,444,267'Quantum device utilizing the quantum effect'1995 5,405,454'Electrically insulated silicon structure and producing method therefor'1995

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1995–2006Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (32)· patent assignee history

1995–2000Based in Neyagawa, JP· patent location history

1999–2006Based in Osaka, JP· patent location history

2004Based in Moriguchi, JP· patent location history

2005–2008Based in Kyoto, JP· patent location history

2008Patents assigned to PANASONIC CORP (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD	32	1995–2006
PANASONIC CORP	1	2008

Locations

Location	Patents	Span
Osaka, JP	15	1999–2006
Neyagawa, JP	12	1995–2000
Kyoto, JP	4	2005–2008
Moriguchi, JP	2	2004