Inventor
MRUNAL ABHIJITH KHADERBAD
Inventor
TW
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices30%
H01LSemiconductor devices28%
B82YSpecific uses or applications of nanostructures16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
PatentTitleYear
12,563,830Semiconductor devices including two-dimensional material and methods of fabrication thereof202612,532,716Low thermal budget dielectric for semiconductor devices202612,444,680Interconnect structures with conductive carbon layers202512,328,938Gate structures for stacked semiconductor devices202512,315,863Contact structures in semiconductor devices202512,255,249Inner spacer structures for gate-all-around field effect transistors202512,255,239Liner layer for backside contacts of semiconductor devices202512,243,915Graphene wrap-around contact202512,166,0792D channel transistors with low contact resistance202412,142,649Semiconductor structure with conductive carbon layer and method for manufacturing the same202412,136,570Graphene layer for low resistance contacts and damascene interconnects202412,136,660Semiconductor device, and method for protecting low-k dielectric feature of semiconductor device202412,087,819Dual channel structure202412,074,068Epitaxial structures for stacked semiconductor devices202412,040,328Semiconductor devices including two-dimensional material and methods of fabrication thereof202411,972,974Self-aligned barrier for metal vias202411,942,358Low thermal budget dielectric for semiconductor devices202411,804,539Transistor isolation structures202311,798,985Methods for manufacturing isolation layers in stacked transistor structures202311,776,960Gate structures for stacked semiconductor devices202311,488,869Transistor isolation structures202211,476,333Dual channel structure202211,476,365Fin field effect transistor device structure and method for forming the same202211,450,666Semiconductor devices including two-dimensional material and methods of fabrication thereof202211,227,794Method for making self-aligned barrier for metal vias In-Situ during a metal halide pre-clean and associated interconnect structure2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (25)· patent assignee history
2022–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 25 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 25 | 2022–2026 |