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Inventor

Yuuzaburou Ban

Inventor
Hirakata, JP

Overview

2→
Patents
1999–2000
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C30Bprimary
C30BSingle-crystal growth33%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light33%
H10HInorganic light-emitting semiconductor devices having potential barriers33%
PatentTitleYear
6,165,812'Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor'20005,923,690'Semiconductor laser device'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2000Patents assigned to MATSUSHITA ELECTRIC INDUSTRIAL CO LTD (2)· patent assignee history
1999Based in Osaka, JP· patent location history
2000Based in Hirakata, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21999–2000
Locations
LocationPatentsSpan
Hirakata, JP12000
Osaka, JP11999