Inventor
Ralf Otterbach
Inventor
Dresden, DE
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices67%
H01LSemiconductor devices17%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
PatentTitleYear
8,987,103'Multi-step deposition of a spacer material for reducing void formation in a dielectric material of a contact level of a semiconductor device'20158,507,351'Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation'20137,981,740'Enhanced cap layer integrity in a high-K metal gate stack by using a hard mask for offset spacer patterning'20117,977,179'Dopant profile tuning for MOS devices by adapting a spacer width prior to implantation'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2015Patents assigned to GLOBALFOUNDRIES INC (4)· patent assignee history
2011–2015Based in Dresden, DE· patent location history
2013–2015Patents assigned to LENSKI MARKUS (2)· patent assignee history
2013–2015Patents assigned to OTTERBACH RALF (2)· patent assignee history
2013Patents assigned to KOERNER GUIDO (1)· patent assignee history
2015Patents assigned to JASCHKE VOLKER (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GLOBALFOUNDRIES INC | 4 | 2011–2015 |
| LENSKI MARKUS | 2 | 2013–2015 |
| OTTERBACH RALFself | 2 | 2013–2015 |
| JASCHKE VOLKER | 1 | 2015 |
| KOERNER GUIDO | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Dresden, DE | 4 | 2011–2015 |