Inventor

Irene McStay

Inventor

Hopewell Junction, NY, US

Overview

2001–2005

Patent span

Electricity

Primary field (CPC H)

Patents· 14 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary

H10BElectronic memory devices44%

H10DInorganic electric semiconductor devices30%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests11%

C23CCoating metallic material4%

PatentTitleYear

6,905,944'Sacrificial collar method for improved deep trench processing'2005 6,709,947'Method of area enhancement in capacitor plates'2004 6,706,634'Control of separation between transfer gate and storage node in vertical DRAM'2004 6,620,724'Low resistivity deep trench fill for DRAM and EDRAM applications'2003 6,613,642'Method for surface roughness enhancement in semiconductor capacitor manufacturing'2003 6,576,565'RTCVD process and reactor for improved conformality and step-coverage'2003 6,559,002'Rough oxide hard mask for DT surface area enhancement for DT DRAM'2003 6,555,430'Process flow for capacitance enhancement in a DRAM trench'2003 6,544,855'Process flow for sacrificial collar with polysilicon void'2003 6,528,383'Simultaneous formation of deep trench capacitor and resistor'2003 6,498,061'Negative ion implant mask formation for self-aligned, sublithographic resolution patterning for single-sided vertical device formation'2002 6,458,647'Process flow for sacrificial collar with poly mask'2002 6,444,516'Semi-insulating diffusion barrier for low-resistivity gate conductors'2002 6,309,924'Method of forming self-limiting polysilicon LOCOS for DRAM cell'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2004Patents assigned to IBM (9)· patent assignee history

2001–2005Based in Hopewell Junction, NY, US· patent location history

2002–2005Patents assigned to INFINEON TECHNOLOGIES AG (9)· patent assignee history

2003Patents assigned to INFINEON TECHNOLOGIES CORP (1)· patent assignee history

2003Based in Hopewell Jct., NY, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
IBM	9	2001–2004
INFINEON TECHNOLOGIES AG	9	2002–2005
INFINEON TECHNOLOGIES CORP	1	2003

Locations

Location	Patents	Span
Hopewell Junction, New York, US	13	2001–2005
Hopewell Jct., New York, US	1	2003