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Inventor

Te-Ming Kung

Inventor
Taichung, TW

Overview

3→
Patents
2016
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices38%
H10NElectric solid-state devices not otherwise provided for25%
C23FNon-mechanical removal of metallic material from surface13%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
PatentTitleYear
9,502,647'Resistive random-access memory (RRAM) with a low-K porous layer'20169,368,394'Dry etching gas and method of manufacturing semiconductor device'20169,281,475'Resistive random-access memory (RRAM) with multi-layer device structure'2016

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (2)· patent assignee history
2016Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (1)· patent assignee history
2016Based in Taichung, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG22016
TAIWAN SEMICONDUCTOR MFG CO LTD12016
Locations
LocationPatentsSpan
Taichung, TW32016