Inventor

Po-Kang Wang

Inventor

San Jose, CA, US

Overview

1991–2020

Patent span

Physics

Primary field (CPC G)

Patents· 143 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Bprimary

G11BInformation storage based on relative movement between record carrier and transducer18%

G11CStatic stores18%

B82YSpecific uses or applications of nanostructures12%

Y10TTechnical subjects covered by former us classification11%

H10NElectric solid-state devices not otherwise provided for10%

H01FMagnets7%

H10BElectronic memory devices6%

G01RMeasuring electric variables5%

H01LSemiconductor devices4%

C21DModifying the physical structure of ferrous metals1%

PatentTitleYear

10,797,232Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions2020 10,763,428Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications2020 10,699,765Methods and circuits for programming STT-MRAM cells for reducing back-hopping2020 10,658,577Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy2020 10,522,747Fully compensated synthetic ferromagnet for spintronics applications2019 10,522,745Low resistance MgO capping layer for perpendicularly magnetized magnetic tunnel junctions2019 10,509,074Electrical testing apparatus for spintronics devices2019 10,431,736Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy2019 10,230,044Fully compensated synthetic ferromagnet for spintronics applications2019 10,203,379GMR biosensor with enhanced sensitivity2019 10,193,062MgO insertion into free layer for magnetic memory applications2019 10,102,896Adaptive reference scheme for magnetic memory applications2018 10,014,465Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy2018 9,966,529MgO insertion into free layer for magnetic memory applications2018 9,842,988'Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications'2017 9,805,816'Implementation of a one time programmable memory using a MRAM stack design'2017 9,780,299'Multilayer structure for reducing film roughness in magnetic devices'2017 9,747,965'Adaptive reference scheme for magnetic memory applications'2017 9,466,319'Perpendicular magnetic recording (PMR) write shield design with minimized wide adjacent track erasure (WATE)'2016 9,429,544'GMR biosensor with enhanced sensitivity'2016 9,361,923'PP3 shape designs for shield domain control to improve either skip track erasure (STE) or write performance for perpendicular magnetic recording (PMR)'2016 9,355,700'Read circuit for memory'2016 9,343,132'MRAM write pulses to dissipate intermediate state domains'2016 9,296,256'Fitting structure of wheel cover'2016 9,105,342'Read circuit for memory'2015 9,070,383'Graded bevel tapered write pole design for field enhancement'2015 8,981,503'STT-MRAM reference layer having substantially reduced stray field and consisting of a single magnetic domain'2015 8,970,985'Graded bevel tapered write pole design for field enhancement'2015 8,817,420'Write head having recessed magnetic material in gap region'2014 8,767,349'Write head having recessed magnetic material in gap region'2014 8,728,825'GMR sensor stripe for a biosensor with enhanced sensitivity'2014 8,693,273'Reference averaging for MRAM sense amplifiers'2014 8,625,234'Graded bevel tapered write pole design for field enhancement'2014 8,593,915'Thermally-assisted magnetic recording head capable of reducing the transient protrusion of an antenna'2013 8,567,045'Process to manufacture a magnetic write head'2013 8,542,464'Write head having recessed magnetic material in gap region'2013 8,525,280'Array of magnetic tunneling junction film structures with process determined in-plane magnetic anisotropy'2013 8,497,559'MRAM with means of controlling magnetic anisotropy'2013 8,422,287'Pulse field assisted spin momentum transfer MRAM design'2013 8,184,399'Magnetic write head with thin and thick portions for balancing writability and ate'2012 8,178,363'MRAM with storage layer and super-paramagnetic sensing layer'2012 8,138,561'Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM'2012 8,133,439'GMR biosensor with enhanced sensitivity'2012 8,089,265'MTJ sensor including domain stable free layer'2012 8,062,909'MRAM with storage layer and super-paramagnetic sensing layer'2011 8,045,295'Method and apparatus for providing an additional ground pad and electrical connection for grounding a magnetic recording head'2011 8,039,885'MRAM with storage layer and super-paramagnetic sensing layer'2011 7,995,425'Power control of TAMR element during read/write transition'2011 7,994,596'Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy'2011 7,852,662'Spin-torque MRAM: spin-RAM, array'2010 7,750,620'MTJ sensor based method to measure an electric current'2010 7,715,224'MRAM with enhanced programming margin'2010 7,696,548'MRAM with super-paramagnetic sensing layer'2010 7,635,974'Magnetic tunnel junction (MTJ) based magnetic field angle sensor'2009 7,613,868'Method and system for optimizing the number of word line segments in a segmented MRAM array'2009 7,609,543'Method and implementation of stress test for MRAM'2009 7,599,158'Side reading reduced GMR for high track density'2009 7,598,597'Segmented magnetic shielding elements'2009 7,588,945'Multi-state thermally assisted storage'2009 7,582,942'Planar flux concentrator for MRAM devices'2009 7,499,314'Reference cell scheme for MRAM'2009 7,486,545'Thermally assisted integrated MRAM design and process for its manufacture'2009 7,483,295'MTJ sensor including domain stable free layer'2009 7,480,172'Programming scheme for segmented word line MRAM array'2009 7,466,583'MRAM with split read-write cell structures'2008 7,456,029'Planar flux concentrator for MRAM devices'2008 7,445,942'Process for manufacturing segmented MRAM array with patterned segmented magnetic shields'2008 7,443,707'Magnetic random access memory array with free layer locking mechanism and method of its use'2008 7,408,748'Side reading reduced GMR for high track density'2008 7,394,247'Magnetic field angle sensor with GMR or MTJ elements'2008 7,391,594'Apparatus for providing an additional ground pad and electrical connection for grounding a magnetic recording head'2008 7,382,577'Magnetic write head having a wider trailing edge pole structure'2008 7,369,430'Adaptive algorithm for MRAM manufacturing'2008 7,369,376'Amorphous layers in a magnetic tunnel junction device'2008 7,362,644'Configurable MRAM and method of configuration'2008 7,345,911'Multi-state thermally assisted storage'2008 7,336,452'Patterned exchange bias GMR using metallic buffer layer'2008 7,321,507'Reference cell scheme for MRAM'2008 7,321,519'Adaptive algorithm for MRAM manufacturing'2008 7,304,360'Method of forming super-paramagnetic cladding material on conductive lines of MRAM devices'2007 7,291,892'Magnetic random access memory designs with controlled magnetic switching mechanism'2007 7,283,337'Abutted exchange bias design for sensor stabilization'2007 7,275,304'Method of forming a hard bias structure in a magnetic head'2007 7,242,046'Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling'2007 7,224,628'Adaptive algorithm for MRAM manufacturing'2007 7,211,874'Magnetic random access memory array with free layer locking mechanism'2007 7,206,549'System and method for testing wireless devices'2007 7,203,039'Side reading reduced GMR for high track density'2007 7,193,816'Magnetic head for perpendicular magnetic recording and method of manufacturing same'2007 7,184,302'Highly efficient segmented word line MRAM array'2007 7,180,769'World line segment select transistor on word line current source side'2007 7,122,386'Method of fabricating contact pad for magnetic random access memory'2006 7,123,506'Method and system for performing more consistent switching of magnetic elements in a magnetic memory'2006 7,105,372'Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy'2006 7,085,183'Adaptive algorithm for MRAM manufacturing'2006 7,071,009'MRAM arrays with reduced bit line resistance and method to make the same'2006 7,064,928'Method and apparatus for providing an additional ground pad and electrical connection for grounding a magnetic recording head'2006 7,047,625'Planarizing process'2006 7,029,941'Magnetic random access memory designs with controlled magnetic switching mechanism'2006 7,027,324'Method and system for providing common read and write word lines for a segmented word line MRAM array'2006 7,012,789'Composite shared pole design for magnetoresistive merged heads'2006 7,009,266'Method and system for providing a magnetic element including passivation structures'2006 6,977,838'Method and system for providing a programmable current source for a magnetic memory'2005 6,960,281'Method to make a wider trailing pole structure by self-aligned pole trim process'2005 6,943,995'Continuous free layer spin valve sensor with patterned exchange underlayer stabilization'2005 6,943,040'Magnetic random access memory designs with controlled magnetic switching mechanism by magnetostatic coupling'2005 6,929,957'Magnetic random access memory designs with patterned and stabilized magnetic shields'2005 6,879,474'Junction stability and yield for spin valve heads'2005 6,842,969'Process for manufacturing a magnetic read head'2005 6,760,966'Process of manufacturing a side reading reduced GMR for high track density'2004 6,668,443'Process for manufacturing a spin valve recording head'2003 6,663,920'Ion implantation method for fabricating magnetoresistive (MR) sensor element'2003 6,606,782'Method of forming a continuous free layer spin valve sensor with patterned exchange underlayer stabilization'2003 6,608,737'Method to make a stitched writer for a giant magneto-resistive head'2003 6,556,377'Stitched write head design having a sunken shared pole'2003 6,524,491'Double plate-up process for fabrication of composite magnetoresistive shared poles'2003 6,469,875'Stitched write head design having a sunken shared pole'2002 6,469,874'Method to make a stitched writer for a giant magneto-resistive head'2002 6,449,131'Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof'2002 6,393,692'Method of manufacture of a composite shared pole design for magnetoresistive merged heads'2002 6,385,017'Continuous free layer spin valve sensor with patterned exchange underlayer stabilization'2002 6,383,574'Ion implantation method for fabricating magnetoresistive (MR) sensor element'2002 6,373,667'Single stripe magnetoresistive (MR) head'2002 6,358,635'Magnetic recording sensor with stabilizing shield'2002 6,230,390'Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof'2001 6,103,136'Method for forming a soft adjacent layer (SAL) magnetoresistive (MR) sensor element with transversely magnetically biased soft adjacent layer (SAL)'2000 5,768,055'Magnetic recording head having a carbon overcoat array on slider air bearings surfaces'1998 5,680,281'Edge-biased magnetoresistive sensor'1997 5,664,316'Method of manufacturing magnetoresistive read transducer having a contiguous longitudinal bias layer'1997 5,508,867'Magnetoresistive sensor with flux keepered spin valve configuration'1996 5,488,528'Pole tip structure for thin film magnetic heads'1996 5,452,165'Close packed magnetic head linear array'1995 5,420,736'MR read transducer with thermal noise cancellation'1995 5,393,376'Method of making pole tip structure for thin film magnetic heads'1995 5,375,023'Submicron thin film inductive head with self-aligned staggered pole-tips'1994 5,343,422'Nonvolatile magnetoresistive storage device using spin valve effect'1994 5,283,942'Sacrificial layer planarization process for fabricating a narrow thin film inductive head'1994 5,285,339'Magnetoresistive read transducer having improved bias profile'1994 5,079,663'Magnetoresistive sensor with track following capability'1992 5,079,035'Method of making a magnetoresistive read transducer having hard magnetic bias'1992 5,073,833'Dual sector servo system for disk file with separate read and write heads'1991 5,018,037'Magnetoresistive read transducer having hard magnetic bias'1991 5,005,096'Magnetoresistive read transducer having hard magnetic shunt bias'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–2018Patents assigned to IBM (19)· patent assignee history

1991–2019Based in San Jose, CA, US· patent location history

2000–2016Patents assigned to HEADWAY TECHNOLOGIES INC (61)· patent assignee history

2005–2012Based in Milpitas, CA, US· patent location history

2006–2013Patents assigned to MAGIC TECHNOLOGIES INC (30)· patent assignee history

2006–2009Patents assigned to APPLIED SPINTRONICS INC (14)· patent assignee history

2011–2020Based in Los Altos, CA, US· patent location history

2016–2019Patents assigned to HEADWAY TECH INC (13)· patent assignee history

2016Based in Tainan, TW· patent location history

2020Based in Los Angeles, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
HEADWAY TECHNOLOGIES INC	61	2000–2016
MAGIC TECHNOLOGIES INC	30	2006–2013
IBM	19	1991–2018
APPLIED SPINTRONICS INC	14	2006–2009
HEADWAY TECH INC	13	2016–2019

Locations

Location	Patents	Span
San Jose, California, US	103	1991–2019
Los Altos, California, US	31	2011–2020
Milpitas, California, US	5	2005–2012
Los Angeles, California, US	1	2020
Tainan, TW	1	2016