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Inventor

Ryo Kawajiri

Inventor
Nomi, JP

Overview

2→
Patents
2016–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices25%
H10DInorganic electric semiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
C23CCoating metallic material13%
H01JElectric discharge tubes or discharge lamps13%
PatentTitleYear
9,653,306'Method for forming crystalline cobalt silicide film'20179,257,273'Charged particle beam apparatus, thin film forming method, defect correction method and device forming method'2016

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2016–2017Patents assigned to JAPAN SCIENCE & TECH AGENCY (2)· patent assignee history
2016–2017Patents assigned to JSR CORP (2)· patent assignee history
2016–2017Patents assigned to KAWAJIRI RYO (2)· patent assignee history
2016–2017Patents assigned to MATSUKI YASUO (2)· patent assignee history
2016–2017Patents assigned to SHIMODA TATSUYA (2)· patent assignee history
2016Based in Ishikawa, JP· patent location history
2017Based in Nomi, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
JAPAN SCIENCE & TECH AGENCY22016–2017
JSR CORP22016–2017
KAWAJIRI RYOself22016–2017
MATSUKI YASUO22016–2017
SHIMODA TATSUYA22016–2017
Locations
LocationPatentsSpan
Nomi, JP12017
Ishikawa, JP12016