Inventor
PEI YING LAI
Inventor
TW
Overview
Patents· 9 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices43%
H01LSemiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
B82YSpecific uses or applications of nanostructures10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
PatentTitleYear
12,527,073Gate structures in semiconductor devices202612,426,332Introducing fluorine to gate after work function metal deposition202512,376,364Semiconductor device and method of manufacture202512,336,273Method for forming semiconductor structure using fluorine to treat gate stack202512,040,365Incorporating nitrogen in dipole engineering for multi-threshold voltage applications in stacked device structures202411,996,453Introducing fluorine to gate after work function metal deposition202411,915,979Gate structures in semiconductor devices202411,756,832Gate structures in semiconductor devices202311,462,626Semiconductor device and method of manufacture2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (9)· patent assignee history
2022–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 9 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 9 | 2022–2026 |