Inventor
Dwight C. Streit
Inventor
Seal Beach, CA, US
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices48%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests21%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
B82YSpecific uses or applications of nanostructures3%
H01CResistors3%
H03FAmplifiers3%
H03HImpedance networks, e.g. resonant circuits3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
PatentTitleYear
6,680,494'Ultra high speed heterojunction bipolar transistor having a cantilevered base'20046,528,829'Integrated circuit structure having a charge injection barrier'20036,465,289'Method of fabricating monolithic multifunction integrated circuit devices'20026,452,464'Backgate heterojunction acoustic charge transport device'20026,376,867'Heterojunction bipolar transistor with reduced thermal resistance'20026,037,646'High-frequency GaAs substrate based schottky barrier diodes'20005,930,636'Method of fabricating high-frequency GaAs substrate-based Schottky barrier diodes'19995,892,248'Double photoresist layer self-aligned heterojuction bipolar transistor'19995,840,612'Method of fabricating very high gain heterojunction bipolar transistors'19985,838,031'Low noise-high linearity HEMT-HBT composite'19985,736,417'Method of fabricating double photoresist layer self-aligned heterojunction bipolar transistor'19985,672,522'Method for making selective subcollector heterojunction bipolar transistors'19975,668,387'Relaxed channel high electron mobility transistor'19975,648,666'Double-epitaxy heterojunction bipolar transistors for high speed performance'19975,631,477'Quaternary collector InAlAs-InGaAlAs heterojunction bipolar transistor'19975,323,138'Reliable thin film resistors for integrated circuit applications'19945,262,335'Method to produce complementary heterojunction bipolar transistors'19935,262,660'High power pseudomorphic gallium arsenide high electron mobility transistors'19935,239,186'Composite quantum well infrared detector'19935,162,243'Method of producing high reliability heterojunction bipolar transistors'19924,559,091'Method for producing hyperabrupt doping profiles in semiconductors'1985Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1985Patents assigned to UNIV CALIFORNIA (1)· patent assignee history
1985Based in Los Angeles, CA, US· patent location history
1992–2003Patents assigned to TRW INC (19)· patent assignee history
1992–2002Based in Long Beach, CA, US· patent location history
1993Based in Redondo Beach, CA, US· patent location history
1997–2004Based in Seal Beach, CA, US· patent location history
2004Patents assigned to NORTHROP GRUMMAN CORP (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TRW INC | 19 | 1992–2003 |
| NORTHROP GRUMMAN CORP | 1 | 2004 |
| UNIV CALIFORNIA | 1 | 1985 |
Locations
| Location | Patents | Span |
|---|---|---|
| Seal Beach, California, US | 14 | 1997–2004 |
| Long Beach, California, US | 5 | 1992–2002 |
| Redondo Beach, California, US | 1 | 1993 |
| Los Angeles, California, US | 1 | 1985 |