Inventor
Yuji Furushima
Inventor
Tokyo, JP
Overview
Patents· 13 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light28%
H10HInorganic light-emitting semiconductor devices having potential barriers13%
B82YSpecific uses or applications of nanostructures10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
G11BInformation storage based on relative movement between record carrier and transducer8%
G02BOptical elements, systems or apparatus5%
H01LSemiconductor devices5%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein3%
G09GArrangements or circuits for control of indicating devices using static means to present variable information3%
H03KPulse technique3%
PatentTitleYear
10,833,477Drive unit and light-emitting device202010,727,144Light emitting apparatus and method of manufacturing light emitting apparatus20209,379,523'Group III nitride semiconductor device, p-type contact structure, and method for fabricating group III nitride semiconductor device'20168,494,020'Semiconductor light emitting device, optical pickup unit and information recording/reproduction apparatus'20138,253,150'Semiconductor light emitting device and method of manufacturing it'20128,243,769'Semiconductor light emitting device, optical pickup unit and information recording/reproduction apparatus'20126,670,203'Method for manufacturing semiconductor laser having recombination layer stripes in current blocking structure'20036,539,039'Optical semiconductor device and method of manufacturing the same'20036,477,283'Electroabsorption optical modulator and fabrication method thereof'20026,465,269'Semiconductor optical device and method of manufacturing the same'20026,337,870'Semiconductor laser having recombination layer stripes in current blocking structure'20026,219,366'Semiconductor optical device and method of manufacturing the same'20015,815,520'light emitting semiconductor device and its manufacturing method'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2003Patents assigned to NEC CORP (7)· patent assignee history
1998–2003Based in Tokyo, JP· patent location history
2012–2020Patents assigned to SONY CORP (5)· patent assignee history
2012–2013Patents assigned to FURUSHIMA YUJI (3)· patent assignee history
2012–2013Patents assigned to TSUYOSHI FUJIMOTO (3)· patent assignee history
2012–2013Patents assigned to AOSHIMA KENTARO (2)· patent assignee history
2012–2020Based in Miyagi, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NEC CORP | 7 | 1998–2003 |
| SONY CORP | 5 | 2012–2020 |
| FURUSHIMA YUJIself | 3 | 2012–2013 |
| TSUYOSHI FUJIMOTO | 3 | 2012–2013 |
| AOSHIMA KENTARO | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 7 | 1998–2003 |
| Miyagi, JP | 6 | 2012–2020 |