Inventor
Tetsuya Ishimaru
Inventor
Tokyo, JP
Overview
Patents· 38 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores22%
H10DInorganic electric semiconductor devices22%
H10BElectronic memory devices16%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems7%
H01LSemiconductor devices5%
H02KDynamo-electric machines5%
H03KPulse technique4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications4%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h103%
PatentTitleYear
11,049,965Semiconductor device and alternator using the same202111,012,022Inverter device and electric motor device using same202110,852,209Water leak sensing system and method202010,319,849Semiconductor device, and alternator and power conversion device which use same201910,304,761Semiconductor device and alternator using same201910,205,314Rectifier including MOSFET and hold circuit that boosts gate voltage of MOSFET, and alternator using the same201910,079,536Rectifier, alternator using same and power supply using same201810,069,436Synchronous rectifier and alternator using the same20189,966,871Rectification device, alternator, and power conversion device20189,831,145Semiconductor device, and alternator and power converter using the semiconductor device20179,117,849'Nonvolatile semiconductor device and method of manufacturing the same'20158,796,756'Nonvolatile semiconductor device and method of manufacturing the same'20148,679,915'Non-volatile semiconductor device and method of fabricating embedded non-volatile semiconductor memory device with sidewall gate'20148,472,258'Semiconductor nonvolatile memory device'20138,390,053'Nonvolatile semiconductor device including a field effect transistor having a charge storage layer of predetermined length'20138,324,092'Non-volatile semiconductor device and method of fabricating embedded non-volatile semiconductor memory device with sidewall gate'20128,125,012'Non-volatile memory device with a silicon nitride charge holding film having an excess of silicon'20128,076,709'Nonvolatile semiconductor memory device'20118,063,433'Nonvolatile semiconductor memory device'20118,064,261'Semiconductor nonvolatile memory device'20118,054,680'Semiconductor device'20117,935,597'Semiconductor device and manufacturing method of the same'20117,915,666'Nonvolatile semiconductor memory devices with charge injection corner'20117,872,298'Split-gate type memory device'20117,863,131'Semiconductor device and manufacturing method for semiconductor device to reduce the lithography masks'20117,847,343'Semiconductor device and manufacturing method of semiconductor device'20107,847,331'Nonvolatile semiconductor memory device'20107,751,255'Semiconductor nonvolatile memory device'20107,709,315'Semiconductor device and method of manufacturing the same'20107,667,259'Non-volatile semiconductor device and method of fabricating embedded non-volatile semiconductor memory device with sidewall gate'20107,529,126'Nonvolatile memory device and semiconductor device'20097,504,689'Semiconductor device and manufacturing method of semiconductor device'20097,443,731'Semiconductor nonvolatile memory device'20087,286,401'Nonvolatile semiconductor memory device'20077,212,444'Semiconductor nonvolatile memory device'20077,130,223'Nonvolatile semiconductor memory device'20067,085,157'Nonvolatile memory device and semiconductor device'20066,972,997'Nonvolatile semiconductor memory device'2005Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2005–2010Patents assigned to RENESAS TECH CORP (11)· patent assignee history
2005–2014Based in Kokubunji, JP· patent location history
2007–2021Based in Tokyo, JP· patent location history
2010–2015Patents assigned to RENESAS ELECTRONICS CORP (16)· patent assignee history
2010–2011Based in Tachikawa, JP· patent location history
2011–2014Patents assigned to ISHIMARU TETSUYA (8)· patent assignee history
2011–2014Patents assigned to YASUI KAN (8)· patent assignee history
2017–2021Patents assigned to HITACHI POWER SEMICONDUCTOR DEVICE LTD (9)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| RENESAS ELECTRONICS CORP | 16 | 2010–2015 |
| RENESAS TECH CORP | 11 | 2005–2010 |
| HITACHI POWER SEMICONDUCTOR DEVICE LTD | 9 | 2017–2021 |
| ISHIMARU TETSUYAself | 8 | 2011–2014 |
| YASUI KAN | 8 | 2011–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 18 | 2007–2021 |
| Kokubunji, JP | 17 | 2005–2014 |
| Tachikawa, JP | 3 | 2010–2011 |