Inventor
PO-KUANG HSIEH
Inventor
TW
Overview
Patents· 11 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices36%
H01LSemiconductor devices29%
B82YSpecific uses or applications of nanostructures11%
C01BNon-metallic elements11%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H10BElectronic memory devices4%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
PatentTitleYear
12,501,639Rinse process after forming fin-shaped structure202512,426,385Semiconductor device and method for fabricating the same202512,302,608Nanowire transistor and method for fabricating the same202512,114,508Semiconductor device and method for fabricating the same202412,027,600Nanowire transistor and method for fabricating the same202411,929,431HEMT and method of fabricating the same202411,735,646Rinse process after forming fin-shaped structure202311,705,498Nanowire transistor and method for fabricating the same202311,670,710HEMT and method of fabricating the same202311,646,367HEMT and method of fabricating the same202311,227,944HEMT and method of fabricating the same2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to UNITED MICROELECTRONICS CORP (11)· patent assignee history
2022–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNITED MICROELECTRONICS CORP | 11 | 2022–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 11 | 2022–2025 |