Inventor
Mari Amano
Inventor
Tokyo, JP
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1070%
H01LSemiconductor devices20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
PatentTitleYear
9,257,390'Semiconductor device with dual damascene wirings'20168,916,466'Method for manufacturing dual damascene wiring in semiconductor device'20148,198,730'Semiconductor device and method of manufacturing the same'20128,188,600'Semiconductor device and method of fabricating the same'20128,174,122'Semiconductor device'20128,004,087'Semiconductor device with dual damascene wirings and method for manufacturing same'20117,867,906'Semiconductor device and method for manufacturing same'2011Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2011–2012Patents assigned to NEC CORP (5)· patent assignee history
2011–2016Based in Tokyo, JP· patent location history
2012–2014Patents assigned to AMANO MARI (4)· patent assignee history
2012–2014Patents assigned to HAYASHI YOSHIHIRO (4)· patent assignee history
2012–2014Patents assigned to TADA MUNEHIRO (4)· patent assignee history
2012–2014Patents assigned to FURUTAKE NAOYA (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NEC CORP | 5 | 2011–2012 |
| AMANO MARIself | 4 | 2012–2014 |
| HAYASHI YOSHIHIRO | 4 | 2012–2014 |
| TADA MUNEHIRO | 4 | 2012–2014 |
| FURUTAKE NAOYA | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 7 | 2011–2016 |