Inventor

Ful-Long Ni

Inventor
Hsinchu, TW

Overview

22→
Patents
1996–2011
Patent span
Physics
Primary field (CPC G)

Patents· 22 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary
G11CStatic stores60%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
H10BElectronic memory devices12%
B82YSpecific uses or applications of nanostructures4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
PatentTitleYear
7,929,365'Memory structure, programming method and reading method therefor, and memory control circuit thereof'20117,558,149'Method and apparatus to control sensing time for nonvolatile memory'20097,443,753'Memory structure, programming method and reading method therefor, and memory control circuit thereof'20087,330,376'Method for memory data storage by partition into narrower threshold voltage distribution regions'20087,123,537'Decoder arrangement of a memory cell array'20066,870,752'High density mask ROM having flat-type bank select'20056,621,129'MROM memory cell structure for storing multi level bit information'20036,621,756'Compact integrated circuit with memory array'20036,535,432'Method of erasing a non-volatile memory'20036,525,361'Process and integrated circuit for a multilevel memory cell with an asymmetric drain'20036,468,869'Method of fabricating mask read only memory'20026,181,604'Method for fast programming of EPROMS and multi-level flash EPROMS'20016,178,118'Electrically programmable semiconductor device with multi-level wordline voltages for programming multi-level threshold voltages'20016,175,519'Virtual ground EPROM structure'20016,028,790'Method and device for programming a non-volatile memory cell by controlling source current pulldown rate'20005,959,892'Apparatus and method for programming virtual ground EPROM array cell without disturbing adjacent cells'19995,895,887'Semiconductor device'19995,866,940'Semiconductor device'19995,847,449'Semiconductor device'19985,825,083'Semiconductor device'19985,700,975'Semiconductor device'19975,563,844'Architecture for accessing very high density memory device'1996

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1996–1999Patents assigned to MEGA CHIPS CORP (6)· patent assignee history
1996–1999Patents assigned to YIU TOM DANG HSING (6)· patent assignee history
1996–1999Based in San Jose, CA, US· patent location history
1999–2011Patents assigned to MACRONIX INT CO LTD (16)· patent assignee history
1999–2011Based in Hsinchu, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
MACRONIX INT CO LTD161999–2011
MEGA CHIPS CORP61996–1999
YIU TOM DANG HSING61996–1999
Locations
LocationPatentsSpan
Hsinchu, TW161999–2011
San Jose, California, US61996–1999