Inventor
Kong-Soo Lee
Inventor
Gyeonggi-do, KR
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices24%
H10DInorganic electric semiconductor devices20%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
H01LSemiconductor devices7%
H10NElectric solid-state devices not otherwise provided for6%
B82YSpecific uses or applications of nanostructures1%
C23CCoating metallic material1%
C23FNon-mechanical removal of metallic material from surface1%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices1%
PatentTitleYear
10,553,449Methods of forming a silicon layer, methods of forming patterns, and methods of manufacturing semiconductor devices using the same20209,646,971'Semiconductor devices including nanowire capacitors and fabricating methods thereof'20179,449,973'Semiconductor device'20169,202,844'Semiconductor devices having blocking layers and methods of forming the same'20158,987,694'Semiconductor devices having a vertical diode and methods of manufacturing the same'20158,329,539'Semiconductor device having recessed gate electrode and method of fabricating the same'20128,241,979'Method of forming a vertical diode and method of manufacturing a semiconductor device using the same'20128,119,503'Methods of forming integrated circuit devices having vertical semiconductor interconnects and diodes therein and devices formed thereby'20128,039,900'Stacked semiconductor devices and methods of manufacturing the same'20117,803,679'Method of forming a vertical diode and method of manufacturing a semiconductor device using the same'20107,598,141'Method of fabricating static random access memory'20097,563,677'Recessed gate electrode and method of forming the same and semiconductor device having the recessed gate electrode and method of manufacturing the same'20097,071,510'Capacitor of an integrated circuit device and method of manufacturing the same'20066,927,143'Capacitor of an integrated circuit device and method of manufacturing the same'20056,881,637'Method of forming a gate electrode, method of manufacturing a semiconductor device having the gate electrode, and method of oxidizing a substrate'20056,812,090'Capacitor of an integrated circuit device and method of manufacturing the same'20046,794,263'Method of manufacturing a semiconductor device including alignment mark'20046,723,662'Methods of forming gate oxide films in integrated circuit devices using wet or dry oxidization processes with reduced chloride'20046,660,580'Capacitor of an integrated circuit device and method of manufacturing the same'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (19)· patent assignee history
2003–2012Based in Gyeonggi-do, KR· patent location history
2004–2006Based in Suwon-si, KR· patent location history
2011–2020Based in Hwaseong-si, KR· patent location history
2012Patents assigned to LEE KONG-SOO (3)· patent assignee history
2012Patents assigned to PARK SANG-JIN (2)· patent assignee history
2012Patents assigned to HA DAE-WON (1)· patent assignee history
2012Patents assigned to HAN JAE-JONG (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 19 | 2003–2020 |
| LEE KONG-SOOself | 3 | 2012 |
| PARK SANG-JIN | 2 | 2012 |
| HA DAE-WON | 1 | 2012 |
| HAN JAE-JONG | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Gyeonggi-do, KR | 10 | 2003–2012 |
| Hwaseong-si, KR | 6 | 2011–2020 |
| Suwon-si, KR | 3 | 2004–2006 |