Inventor
Dae Geun Yang
Inventor
Watervliet, NY, US
Overview
Patents· 12 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices35%
H01LSemiconductor devices32%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices3%
H10BElectronic memory devices3%
PatentTitleYear
9,735,154'Semiconductor structure having gap fill dielectric layer disposed between fins'20179,608,086'Metal gate structure and method of formation'20179,196,499'Method of forming semiconductor fins'20159,159,630'Fin field-effect transistor (FinFET) device formed using a single spacer, double hardmask scheme'20159,147,696'Devices and methods of forming finFETs with self aligned fin formation'20159,105,478'Devices and methods of forming fins at tight fin pitches'20159,034,767'Facilitating mask pattern formation'20158,993,445'Selective removal of gate structure sidewall(s) to facilitate sidewall spacer protection'20158,969,205'Double patterning via triangular shaped sidewall spacers'20158,936,986'Methods of forming finfet devices with a shared gate structure'20158,753,940'Methods of forming isolation structures and fins on a FinFET semiconductor device'20148,697,501'Semiconductor device having a gate formed on a uniform surface and method for forming the same'2014Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2014–2017Patents assigned to GLOBALFOUNDRIES INC (12)· patent assignee history
2014–2017Based in Watervliet, NY, US· patent location history
2017Patents assigned to GLOBAL FOUNDRIES INC (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GLOBALFOUNDRIES INC | 12 | 2014–2017 |
| GLOBAL FOUNDRIES INC | 1 | 2017 |
Locations
| Location | Patents | Span |
|---|---|---|
| Watervliet, New York, US | 12 | 2014–2017 |