Inventor
Dong-Sil Park
Inventor
Niskayuna, NY, US
Overview
Patents· 40 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth16%
Y10TTechnical subjects covered by former us classification14%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy12%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution12%
C23CCoating metallic material7%
C03CChemical composition of glasses, glazes or vitreous enamels6%
B82YSpecific uses or applications of nanostructures4%
C01BNon-metallic elements4%
C04BLime, magnesia4%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
PatentTitleYear
10,208,396Crystalline gallium nitride containing flourine20199,279,193'Method of making a gallium nitride crystalline composition having a low dislocation density'20169,067,818'Sealing glass composition and article'20158,357,945'Gallium nitride crystal and method of making same'20138,334,053'Seal structure and associated method'20128,043,986'Sealing glass composition, method and article'20118,039,412'Crystalline composition, device, and associated method'20118,034,457'Seal structure and associated method'20117,942,970'Apparatus for making crystalline composition'20117,935,382'Method for making crystalline composition'20117,859,008'Crystalline composition, wafer, device, and associated method'20107,786,503'Gallium nitride crystals and wafers and method of making'20107,642,122'Method for forming nitride crystals'20107,638,815'Crystalline composition, wafer, and semi-conductor structure'20097,582,498'Resonant cavity light emitting devices and associated method'20097,390,534'Diffusion coating process'20087,368,015'Apparatus for producing single crystal and quasi-single crystal, and associated method'20087,316,746'Crystals for a semiconductor radiation detector and method for making the crystals'20087,098,487'Gallium nitride crystal and method of making same'20067,078,731'Gallium nitride crystals and wafers and method of making'20067,063,741'High pressure high temperature growth of crystalline group III metal nitrides'20067,009,215'Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates'20066,887,144'Surface impurity-enriched diamond and method of making'20056,861,130'Sintered polycrystalline gallium nitride and its production'20056,511,630'Method for forming a coating by use of foam technique'20036,413,582'Method for forming metallic-based coating'20026,299,935'Method for forming a coating by use of an activated foam technique'20015,523,071'Method for enhancing the toughness of manufactured diamond'19964,664,942'Nickel diffusion bonded to metallized ceramic body and method'19874,590,095'Nickel coating diffusion bonded to metallized ceramic body and coating method'19864,518,624'Process of making a corrosion-resistant coated ferrous body'19854,515,865'Corrosion-resistant coated ferrous body'19854,341,849'Sodium resistant sealing glasses and sodium-sulfur cells sealed with said glasses'19824,287,664'Sulfur electrode container and methods of manufacture'19814,268,313'Sodium resistant sealing glasses'19814,234,668'Composite sulfur electrode container and method of manufacture'19804,232,098'Sodium-sulfur cell component protected by a high chromium alloy and method for forming'19804,219,128'Sulfur electrode container construction and method of manufacture'19804,209,573'Sulfur electrode container and methods of manufacture'19804,131,226'Sulfur electrode container construction and method of manufacture'1978Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1978–1985Patents assigned to ELECTRIC POWER RES INST (6)· patent assignee history
1978–2005Based in Schenectady, NY, US· patent location history
1980–2015Patents assigned to GEN ELECTRIC (20)· patent assignee history
1981Based in Clifton Park, NY, US· patent location history
2001–2019Based in Niskayuna, NY, US· patent location history
2008–2016Patents assigned to MOMENTIVE PERFORMANCE MAT INC (11)· patent assignee history
2011–2016Patents assigned to PARK DONG-SIL (5)· patent assignee history
2013–2016Patents assigned to D EVELYN MARK PHILIP (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| GEN ELECTRIC | 20 | 1980–2015 |
| MOMENTIVE PERFORMANCE MAT INC | 11 | 2008–2016 |
| ELECTRIC POWER RES INST | 6 | 1978–1985 |
| PARK DONG-SILself | 5 | 2011–2016 |
| D EVELYN MARK PHILIP | 2 | 2013–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Niskayuna, New York, US | 26 | 2001–2019 |
| Schenectady, New York, US | 13 | 1978–2005 |
| Clifton Park, New York, US | 1 | 1981 |