Inventor
TAKASHI ANDO
Inventor
US
Overview
Patents· 169 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices20%
H10BElectronic memory devices16%
H10DInorganic electric semiconductor devices15%
H10NElectric solid-state devices not otherwise provided for14%
G11CStatic stores8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
B82YSpecific uses or applications of nanostructures5%
G06NComputing arrangements based on specific computational models4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%
G06FElectric digital data processing2%
PatentTitleYear
12,575,402Non-planar metal-insulator-metal structure202612,575,110Localized anneal of ferroelectric dielectric202612,568,776Multifilament resistive memory with insulation layers202612,563,786Single work function metal and multiple threshold voltage scheme202612,557,295Embedded ReRAM with backside contact202612,550,632Resistive memory with resistance spreading layer202612,507,465Dielectric tuning of negative capacitance in dual channel field effect transistors202512,484,235Solid-state switch202512,464,960Metal hard mask integration for active device structures202512,464,796Gate induced drain leakage reduction in FinFETs202512,453,293Redundant bottom pad and sacrificial via contact for process induced RRAM forming202512,446,480Top contact on resistive random access memory202512,408,564Process-induced forming of oxide RRAM202512,408,369Vertical transport field effect transistors having different threshold voltages along the channel202512,408,431Gate stack quality for gate-all-around field-effect transistors202512,402,342Nanosheet device with T-shaped dual inner spacer202512,396,376Piezoelectric memory202512,382,621Decoupling capacitor inside gate cut trench202512,364,174Global heater for phase change memory202512,310,034Semiconductor device identification using preformed resistive memory202512,284,922Stacked access device and resistive memory202512,272,657RRAM filament location for physically unclonable function202512,266,393Negative capacitance for ferroelectric capacitive memory cell202512,255,106Multi-Vt nanosheet devices202512,234,323Transparent polyimide film and production method therefor202512,225,833Oxide-based resistive memory having a plasma-exposed bottom electrode202512,225,835Resistive switching device having a protective electrode ring202512,207,573Phase change memory cell with superlattice based thermal barrier202512,191,352Using different work-functions to reduce gate-induced drain leakage current in stacked nanosheet transistors202512,156,395Metal gate patterning for logic and SRAM in nanosheet devices202412,150,392Transfer length phase change material (PCM) based bridge cell202412,135,497Random weight initialization of non-volatile memory array202412,136,671Gate-all-around field-effect transistor having source side lateral end portion smaller than a thickness of channel portion and drain side lateral end portion202412,099,616Physically unclonable function based on a phase change material array202412,058,943Phase-change material-based XOR logic gates202412,057,387Decoupling capacitor inside gate cut trench202412,026,605FeFET unit cells for neuromorphic computing202412,004,436RRAM with high work function cap202411,990,470Ferroelectric and paraelectric stack capacitors202411,973,141Nanosheet transistor with ferroelectric region202411,965,499Motor and air compressor202411,956,975BEOL fat wire level ground rule compatible embedded artificial intelligence integration202411,948,618Non-volatile analog resistive memory cells implementing ferroelectric select transistors2024D1020742Memory card reader for programmable controller202411,942,388Temperature-assisted device with integrated thin-film heater202411,937,522Confining filament at pillar center for memory devices202411,929,404Transistor gates having embedded metal-insulator-metal capacitors202411,923,458FeFET with double gate structure202411,915,751Nonvolatile phase change material logic device202411,915,926Percolation doping of inorganic-organic frameworks for multiple device applications202411,915,734Spin-orbit-torque magnetoresistive random-access memory with integrated diode202411,916,014Gate contact inside gate cut trench202411,916,099Multilayer dielectric for metal-insulator-metal capacitor202411,910,734Phase change memory cell with ovonic threshold switch202411,901,002RRAM filament spatial localization using a laser stimulation202411,864,474ReRAM analog PUF using filament location202411,855,148Vertical field effect transistor with dual threshold voltage202311,855,180Gate induced drain leakage reduction in FinFETs202311,856,798Resistive random-access memory random number generator202311,844,293Physical unclonable function device with phase change202311,844,290Plasma co-doping to reduce the forming voltage in resistive random access memory (ReRAM) devices202311,830,877Co-integrated channel and gate formation scheme for nanosheet transistors having separately tuned threshold voltages202311,818,886Low program voltage flash memory cells with embedded heater in the control gate202311,805,713Drift mitigation for resistive memory devices202311,805,714Phase change memory with conductive bridge filament202311,800,698Semiconductor structure with embedded capacitor202311,790,243Ferroelectric field effect transistor for implementation of decision tree202311,784,096Vertical transport field-effect transistors having germanium channel surfaces202311,770,986Etch-resistant doped scavenging carbide electrodes202311,756,960Multi-threshold voltage gate-all-around transistors202311,756,996Formation of wrap-around-contact for gate-all-around nanosheet FET202311,748,524Tamper resistant obfuscation circuit202311,742,425FinFET device with partial interface dipole formation for reduction of gate induced drain leakage202311,737,289High density ReRAM integration with interconnect202311,735,628Nanosheet metal-oxide semiconductor field effect transistor with asymmetric threshold voltage202311,730,070Resistive random-access memory device with step height difference202311,727,977Non-volatile analog resistive memory cells implementing ferroelectric select transistors202311,707,002CBRAM with controlled bridge location202311,700,778Method for controlling the forming voltage in resistive random access memory devices202311,688,457Using ferroelectric field-effect transistors (FeFETs) as capacitive processing units for in-memory computing202311,683,941Resistive random access memory integrated with vertical transport field effect transistors202311,665,983Phase change memory cell with ovonic threshold switch202311,653,578Phase-change material-based XOR logic gates202311,647,684Nonvolatile tunable capacitive processing unit202311,646,362Vertical transport field-effect transistor structure having increased effective width and self-aligned anchor for source/drain region formation202311,647,639Conductive bridging random access memory formed using selective barrier metal removal202311,647,680Oxide-based resistive memory having a plasma-exposed bottom electrode202311,631,462Temperature assisted programming of flash memory for neuromorphic computing202311,631,809In-memory resistive random access memory XOR logic using complimentary switching202311,610,941Integrated non volatile memory electrode thin film resistor cap and etch stop202311,605,673Dual resistive random-access memory with two transistors202311,590,557Wire forming apparatus202311,594,596Back-end-of-line compatible metal-insulator-metal on-chip decoupling capacitor202311,588,105Phase-change memory device with reduced programming voltage202311,587,837Oxygen vacancy passivation in high-k dielectrics for vertical transport field effect transistor202311,586,899Neuromorphic device with oxygen scavenging gate202311,587,890Tamper-resistant circuit, back-end of the line memory and physical unclonable function for supply chain protection202311,572,437Thermoplastic resin, thermoplastic resin composition, and heat conductive sheet202311,563,082Reduction of drain leakage in nanosheet device202311,557,724Resistive memory with embedded metal oxide fin for gradual switching202311,527,574Stacked resistive memory with individual switch control202211,527,616Vertical transport CMOS transistors with asymmetric threshold voltage202211,527,647Field effect transistor (FET) devices202211,515,217Complementary metal oxide semiconductor device having fin field effect transistors with a common metal gate202211,515,214Threshold voltage adjustment by inner spacer material selection202211,508,438RRAM filament location based on NIR emission202211,502,252Resistive switching memory cell202211,501,023Secure chip identification using resistive processing unit as a physically unclonable function202211,495,668Full air-gap spacers for gate-all-around nanosheet field effect transistors202211,495,669Full air-gap spacers for gate-all-around nanosheet field effect transistors202211,481,611RRAM crossbar array structure for multi-task learning202211,456,416Resistive switching memory cell202211,456,308Low-voltage flash memory integrated with a vertical field effect transistor202211,444,165Asymmetric threshold voltages in semiconductor devices202211,437,102Memory erasure using proximity heaters202211,430,660Confined work function material for gate-all around transistor devices202211,430,954Resistance drift mitigation in non-volatile memory cell202211,430,513Non-volatile memory structure and method for low programming voltage for cross bar array202211,430,510Multi-level ferroelectric field-effect transistor devices202211,424,362NCFETS with complimentary capacitance matching using stacked n-type and p-type nanosheets202211,387,342Multi threshold voltage for nanosheet202211,379,125Trusted field programmable gate array2022D0956001Programmable controller202211,362,274Laterally switching cell having sub-stoichiometric metal oxide active layer202211,335,730Vertical resistive memory device with embedded selectors202211,322,202Semiconductor logic circuits including a non-volatile memory cell202211,309,383Quad-layer high-k for metal-insulator-metal capacitors202211,299,485Thiophene derivative and use thereof202211,302,810Ferroelectric field effect transistor with nanowire core202211,302,794FinFET with dual work function metal202211,295,988Semiconductor FET device with bottom isolation and high-k first202211,289,650Stacked access device and resistive memory202211,276,732Semiconductor memory devices formed using selective barrier metal removal202211,258,012Oxygen-free plasma etching for contact etching of resistive random access memory202211,251,094Oxygen vacancy passivation in high-k dielectrics for vertical transport field effect transistor202211,244,999Artificial synapse with hafnium oxide-based ferroelectric layer in CMOS back-end202211,239,359Fabricating a gate-all-around (GAA) field effect transistor having threshold voltage asymmetry by thinning source side lateral end portion of the nanosheet layer202211,232,824Non-volatile analog resistive memory cells implementing ferroelectric select transistors202211,222,922Resistive random access memory cells integrated with shared-gate vertical field effect transistors202211,217,450Device with pure silicon oxide layer on silicon-germanium layer202211,211,379Fabrication of field effect transistors with different threshold voltages through modified channel interfaces202111,211,429Vertical intercalation device for neuromorphic computing202111,205,698Multiple work function nanosheet transistors with inner spacer modulation202111,195,764Vertical transport field-effect transistors having germanium channel surfaces202111,195,929Conformal replacement gate electrode for short channel devices202111,195,911Bottom dielectric isolation structure for nanosheet containing devices202111,189,712Formation of vertical transport field-effect transistor structure having increased effective width202111,189,661FinFET 2T2R RRAM202111,189,786Tapered resistive memory with interface dipoles202111,183,636Techniques for forming RRAM cells202111,183,632Self-aligned edge passivation for robust resistive random access memory connection202111,177,257Fabrication of field effect transistors with different threshold voltages through modified channel interfaces202111,177,436Resistive memory with embedded metal oxide fin for gradual switching202111,177,319RRAM device with spacer for electrode isolation202111,177,225Semiconductor device including physical unclonable function202111,177,366Gate induced drain leakage reduction in FinFETs202111,164,908Vertical intercalation device for neuromorphic computing202111,165,017Replacement bottom electrode structure process to form misalignment tolerate MRAM with high yield202111,164,907Resistive random access memory integrated with stacked vertical transistors202111,158,795Resistive switching memory with replacement metal electrode202111,158,715Vertical FET with asymmetric threshold voltage and channel thicknesses202111,158,793Multivalent oxide spacers for analog switching resistive memory202111,152,214Structures and methods for equivalent oxide thickness scaling on silicon germanium channel or III-V channel of semiconductor device202111,152,510Long channel optimization for gate-all-around transistors202111,152,264Multi-Vt scheme with same dipole thickness for gate-all-around transistors202111,145,811Resistive memory with core and shell oxides and interface dipoles202111,145,816Resistive random access memory cells integrated with vertical field effect transistor202111,145,814Phase change memory with conductive bridge filament202111,139,215Hybrid gate stack integration for stacked vertical transport field-effect transistors2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to IBM (162)· patent assignee history
2021–2023Patents assigned to ULVAC INC (3)· patent assignee history
2021–2026Based in US· patent location history
2022–2023Patents assigned to TOKYO ELECTRON LTD (3)· patent assignee history
2022–2024Patents assigned to MITSUBISHI ELECTRIC CORP (2)· patent assignee history
2022–2025Based in JP· patent location history
2023–2025Patents assigned to KANEKA CORP (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 162 | 2021–2026 |
| TOKYO ELECTRON LTD | 3 | 2022–2023 |
| ULVAC INC | 3 | 2021–2023 |
| KANEKA CORP | 2 | 2023–2025 |
| MITSUBISHI ELECTRIC CORP | 2 | 2022–2024 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 162 | 2021–2026 |
| JP | 7 | 2022–2025 |