Inventor
Stefan Sedlmaier
Inventor
Munich, DE
Overview
Patents· 18 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices56%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1025%
H01LSemiconductor devices9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H03KPulse technique3%
PatentTitleYear
9,941,365Method for forming a stress-reduced field-effect semiconductor device20189,406,763'Stress-reduced field-effect semiconductor device and method for forming therefor'20169,190,511'Semiconductor component with a drift region and a drift control region'20158,907,408'Stress-reduced field-effect semiconductor device and method for forming therefor'20148,643,086'Semiconductor component with high breakthrough tension and low forward resistance'20148,461,648'Semiconductor component with a drift region and a drift control region'20138,319,261'Semiconductor component structure with vertical dielectric layers'20128,263,450'Power semiconductor component with charge compensation structure and method for the fabrication thereof'20128,193,584'Semiconductor component including a drift zone and a drift control zone'20128,110,868'Power semiconductor component with a low on-state resistance'20127,968,919'Integrated circuit including a charge compensation component'20117,947,569'Method for producing a semiconductor including a foreign material layer'20117,943,987'Semiconductor component with a drift zone and a drift control zone'20117,943,449'Semiconductor component structure with vertical dielectric layers'20117,821,033'Semiconductor component comprising a drift zone and a drift control zone'20107,709,891'Component arrangement including a power semiconductor component having a drift control zone'20107,554,137'Power semiconductor component with charge compensation structure and method for the fabrication thereof'20097,459,365'Method for fabricating a semiconductor component'2008Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2008–2015Patents assigned to INFINEON TECHNOLOGIES AUSTRIA (14)· patent assignee history
2008–2018Based in Munich, DE· patent location history
2009–2011Based in München, DE· patent location history
2012–2014Patents assigned to MAUDER ANTON (7)· patent assignee history
2012–2014Patents assigned to SEDLMAIER STEFAN (7)· patent assignee history
2012–2014Patents assigned to WILLMEROTH ARMIN (5)· patent assignee history
2012–2014Patents assigned to HIRLER FRANZ (3)· patent assignee history
2012Based in Müchen, DE· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AUSTRIA | 14 | 2008–2015 |
| MAUDER ANTON | 7 | 2012–2014 |
| SEDLMAIER STEFANself | 7 | 2012–2014 |
| WILLMEROTH ARMIN | 5 | 2012–2014 |
| HIRLER FRANZ | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Munich, DE | 15 | 2008–2018 |
| München, DE | 2 | 2009–2011 |
| Müchen, DE | 1 | 2012 |