Inventor
Craig Capell
Inventor
Hillsborough, NC, US
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices30%
H10DInorganic electric semiconductor devices30%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
G01RMeasuring electric variables10%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
PatentTitleYear
9,887,287'Power semiconductor devices having gate trenches with implanted sidewalls and related methods'20189,337,268'SiC devices with high blocking voltage terminated by a negative bevel'20169,306,004'SiC devices with high blocking voltage terminated by a negative bevel'20169,184,237'Vertical power transistor with built-in gate buffer'20156,514,779'Large area silicon carbide devices and manufacturing methods therefor'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2018Patents assigned to CREE INC (4)· patent assignee history
2003Based in Durham, NC, US· patent location history
2015–2018Based in Hillsborough, NC, US· patent location history
2016Patents assigned to AGARWAL ANANT (1)· patent assignee history
2016Patents assigned to CAPELL CRAIG (1)· patent assignee history
2016Patents assigned to RYU SEI-HYUNG (1)· patent assignee history
2016Patents assigned to ZHANG QINGCHUN (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CREE INC | 4 | 2003–2018 |
| AGARWAL ANANT | 1 | 2016 |
| CAPELL CRAIGself | 1 | 2016 |
| RYU SEI-HYUNG | 1 | 2016 |
| ZHANG QINGCHUN | 1 | 2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hillsborough, NC, US | 4 | 2015–2018 |
| Durham, NC, US | 1 | 2003 |