LexDanaLexDanabeta
Inventor

Takuji Matsumoto

Inventor
Tokyo, JP

Overview

106→
Patents
1986–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 106 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices27%
G03GElectrography15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation8%
H01LSemiconductor devices6%
H04NPictorial communication, e.g. television3%
H10BElectronic memory devices3%
LOC163%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
10,859,943Container mounting structure, image forming unit, and image forming apparatus202010,852,665Container mounting structure, image forming unit, and image forming apparatus202010,732,564Rotating device and image forming apparatus202010,684,574Container, container mounting structure, image forming unit, and image forming apparatus202010,438,983Solid-state imaging device, production method thereof, and electronic device201910,319,758Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus201910,020,334Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus201810,007,210Developing device including a capturing member and image forming apparatus20189,952,230Method of inhibiting nonspecific reaction in PIVKA-II assay reagent2018D0812680'Toner cartridge'2018D0812681'Toner cartridge'20189,864,314'Image forming apparatus'20189,728,564'Solid-state imaging device, method of manufacturing the same, and imaging apparatus'20179,696,656'Developer replenishment device and image forming apparatus'20179,673,251'Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus'20179,484,369'Solid-state imaging device, method of manufacturing the same, and imaging apparatus'20169,442,422'Powder storage container, developer replenishment device, and image forming apparatus'20169,397,136'Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus'20169,389,539'Image forming apparatus with transport devices having differing configurations'20169,356,146'Semiconductor device with recess, epitaxial source/drain region and diffuson'20169,298,131'Image forming apparatus'20169,165,975'Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus'20159,142,589'Solid-state imaging device, method of manufacturing the same, and imaging apparatus'20159,099,365'Method for manufacturing solid-state imaging device'20159,070,704'Method for manufacturing semiconductor device with recess, epitaxial growth and diffusion'20159,052,673'Structural member, image forming apparatus and drive transmitting mechanism'20159,042,791'Powder accommodation container, image forming apparatus and manufacturing method of the image forming apparatus'20158,953,077'Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus'20158,918,033'Powder accommodation container, image forming apparatus and manufacturing method of the image forming apparatus'20148,918,029'Developer container and image-forming apparatus'20148,918,034'Powder accommodation container, image forming apparatus and manufacturing method of the image forming apparatus'20148,849,150'Charging device, image forming structure, and image forming apparatus'2014D0713448'Toner cartridge'2014D0712456'Toner cartridge'2014D0712458'Toner cartridge'20148,728,852'Solid-state imaging device, production method thereof, and electronic device'20148,605,183'Solid-state imaging device, method of manufacturing the same, and imaging apparatus'20138,526,861'Image forming apparatus'20138,525,909'Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatus'20138,518,771'Method for manufacturing solid-state imaging device'20138,486,793'Method for manufacturing semiconductor device with semiconductor materials with different lattice constants'20138,431,880'Solid-state imaging device, method of producing the same, and imaging device'20138,380,104'Replacement unit and image forming device'20138,369,736'Developing device and image forming apparatus'20138,270,872'Image forming apparatus having a connecting mechanism between photoreceptor assembly and developing assembly'20128,121,524'Developer supply container and image forming apparatus'20128,115,154'Solid-state imaging device, method of producing the same, and imaging device'20128,045,895'Developing device and image forming device'20118,039,901'Epitaxial source/drain transistor'20118,014,705'Developing device, image supporter unit, and image formation apparatus'20117,912,409'Toner cartridge'20117,838,349'Semiconductor device and method of manufacturing the same'20107,741,679'Semiconductor device, method of manufacturing same and method of designing same'20107,723,790'Semiconductor device and method of manufacturing the same'20107,647,010'Toner cartridge and image forming apparatus'20107,643,777'Toner cartridge'20107,577,388'Developing roller, and developing device and image-forming apparatus using the same'20097,541,644'Semiconductor device with effective heat-radiation'20097,531,878'Semiconductor MIS transistor formed on SOI semiconductor substrate'20097,529,511'Toner cartridge'20097,504,291'MOS transistor on an SOI substrate with a body contact and a gate insulating film with variable thickness'20097,494,883'Semiconductor device having a trench isolation and method of fabricating the same'20097,482,658'Semiconductor device and method of manufacturing the same'20097,439,587'Semiconductor device and method of manufacturing the same'20087,393,731'Semiconductor device and method of manufacturing the same'20087,358,569'Semiconductor device with semiconductor layer having various thickness'20087,303,950'Semiconductor device, method of manufacturing same and method of designing same'20077,300,847'MOS transistor on an SOI substrate with a body contact and a gate insulating film with variable thickness'20077,256,463'Semiconductor device having SOI structure including a load resistor of an sram memory cell'20077,244,620'Method for quantitatively determining a reducing substance and a reagent for quantitative determination'20077,198,890'Method for quantitatively determining homocysteine and a reagent for quantitative determination of homocysteine'20077,193,272'Semiconductor device and method of manufacturing the same'20077,183,167'Semiconductor device having a trench isolation and method of fabricating the same'20077,164,172'Semiconductor device and method of manufacturing same'20077,155,148'Image forming apparatus'20067,144,764'Method of manufacturing semiconductor device having trench isolation'20067,109,553'Semiconductor device and method of manufacturing same'20067,067,881'Semiconductor device'20067,045,867'Semiconductor device of reduced gate overlap capacitance and method of manufacturing the semiconductor device'20067,005,705'MOS transistor on an SOI substrate with a body contact and a gate insulating film with variable thickness'20066,958,266'Semiconductor device, method of manufacturing same and method of designing same'20056,953,979'Semiconductor device, method of manufacturing same and method of designing same'20056,933,565'Semiconductor device and method of manufacturing the same'20056,914,307'Semiconductor device and method of manufacturing the same'20056,875,663'Semiconductor device having a trench isolation and method of fabricating the same'20056,870,226'Semiconductor device and method of manufacturing same'20056,864,534'Semiconductor wafer'20056,841,400'Method of manufacturing semiconductor device having trench isolation'20056,806,537'Semiconductor device having offset insulation film formed on insulation film, and method of manufacturing the same'20046,794,717'Semiconductor device and method of manufacturing the same'20046,774,435'Semiconductor wafer and semiconductor device comprising gettering layer'2004D0491979'Toner cartridge'20046,713,804'TFT with a negative substrate bias that decreases in time'20046,646,306'Semiconductor device'20036,627,512'Method of manufacturing a semiconductor device'20036,611,041'Inductor with patterned ground shield'20036,608,345'Nonvolatile semiconductor memory device and semiconductor integrated circuit'20036,495,898'Semiconductor device and method of manufacturing the same'20026,486,513'Semiconductor device'20026,455,894'Semiconductor device, method of manufacturing the same and method of arranging dummy region'20026,452,249'Inductor with patterned ground shield'20026,384,241'Purified salt of -hydroxyethoxy acetic acid, purified 2-p-dioxanone, and manufacturing method therefor'20026,314,021'Nonvolatile semiconductor memory device and semiconductor integrated circuit'20016,249,026'MOS Transistor with a buried oxide film containing fluorine'20016,035,169'Developing device'20004,599,834'Seismic isolator'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1986–2018Based in Yokohama, JP· patent location history
2000–2020Patents assigned to FUJI XEROX CO LTD (35)· patent assignee history
2001–2007Patents assigned to MITSUBISHI ELECTRIC CORP (14)· patent assignee history
2001–2010Based in Tokyo, JP· patent location history
2004–2010Patents assigned to RENESAS TECH CORP (29)· patent assignee history
2006–2020Based in Kanagawa, JP· patent location history
2006–2013Based in Saitama, JP· patent location history
2011–2019Patents assigned to SONY CORP (21)· patent assignee history
2012–2018Patents assigned to MATSUMOTO TAKUJI (15)· patent assignee history
2013–2015Based in Kumamoto, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
FUJI XEROX CO LTD352000–2020
RENESAS TECH CORP292004–2010
SONY CORP212011–2019
MATSUMOTO TAKUJIself152012–2018
MITSUBISHI ELECTRIC CORP142001–2007
Locations
LocationPatentsSpan
Tokyo, JP412001–2010
Kanagawa, JP402006–2020
Saitama, JP132006–2013
Yokohama, JP31986–2018
Kumamoto, JP22013–2015