LexDanaLexDanabeta
Inventor

Yurii A. Vlasov

Inventor
Katonah, NY, US

Overview

68→
Patents
2000–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 68 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G02Bprimary
G02BOptical elements, systems or apparatus20%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation12%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein9%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution8%
H10DInorganic electric semiconductor devices6%
B82YSpecific uses or applications of nanostructures6%
H01LSemiconductor devices6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
H04BTransmission4%
PatentTitleYear
10,839,292Accelerated neural network training using a pipelined resistive processing unit architecture202010,664,745Resistive processing units and neural network training methods202010,373,051Resistive processing unit201910,248,907Resistive processing unit20199,547,125'Buried waveguide photodetector'20179,455,372'Method and apparatus for optical modulation'20169,243,784'Semiconductor photonic package'20169,236,287'Fabrication of localized SOI on localized thick box lateral epitaxial realignment of deposited non-crystalline film on bulk semiconductor substrates for photonics device integration'20169,229,164'Butt-coupled buried waveguide photodetector'20169,206,965'Semiconductor photonic package'20159,117,946'Buried waveguide photodetector'20159,087,952'Stress engineered multi-layers for integration of CMOS and Si nanophotonics'20159,057,832'Double layer interleaved p-n diode modulator'20159,059,025'Photonics device and CMOS device having a common gate'20159,006,049'Fabricating photonics devices fully integrated into a CMOS manufacturing process'20159,006,048'Fabricating photonics devices fully integrated into a CMOS manufacturing process'20158,977,138'Optical receiver using infinite impulse response decision feedback equalization'20158,953,952'Optical receiver based on a decision feedback equalizer'20158,942,519'Material structures for front-end of the line integration of optical polarization splitters and rotators'20158,923,665'Material structures for front-end of the line integration of optical polarization splitters and rotators'20148,912,032'Temperature control device for optoelectronic devices'20148,889,447'Double layer interleaved p-n diode modulator'20148,879,927'Optical receiver based on a decision feedback equalizer'20148,846,440'Germanium photodetector'20148,841,162'Germanium photodetector'20148,796,747'Photonics device and CMOS device having a common gate'20148,798,484'Optical receiver using infinite impulse response decision feedback equalization'20148,772,902'Fabrication of a localized thick box with planar oxide/SOI interface on bulk silicon substrate for silicon photonics integration'20148,765,536'Stress engineered multi-layers for integration of CMOS and Si nanophotonics'20148,724,934'Multi-mode multiplexing using staged coupling and quasi-phase-matching'20148,683,393'Integrated design environment for nanophotonics'20148,637,335'Photonic modulator with a semiconductor contact'20148,633,067'Fabricating photonics devices fully integrated into a CMOS manufacturing process'20148,627,240'Integrated design environment for nanophotonics'20148,614,116'Germanium photodetector'20138,606,060'Method and apparatus for dynamic manipulation and dispersion in photonic crystal devices'20138,592,743'Low distortion high bandwidth adaptive transmission line for integrated photonic applications'20138,541,734'Avalanche impact ionization amplification devices'20138,530,821'Low distortion high bandwidth adaptive transmission line for integrated photonics applications'20138,526,090'Double layer interleaved p-n diode modulator'20138,525,264'Photonic modulator with a semiconductor contact'20138,406,575'Junction field effect transistor geometry for optical modulators'20138,395,103'Avalanche impact ionization amplification devices'20138,378,465'Method and apparatus for optical modulation'20138,363,686'Temperature control device for optoelectronic devices'20138,363,987'Multi-mode multiplexing using staged coupling and quasi-phase-matching'20138,304,272'Germanium photodetector'20128,232,516'Avalanche impact ionization amplification devices'20128,139,904'Method and apparatus for implementing optical deflection switching using coupled resonators'20128,111,724'Temperature control device for optoelectronic devices'20128,098,968'Silicide thermal heaters for silicon-on-insulator nanophotonic devices'20127,999,344'Optoelectronic device with germanium photodetector'20117,955,887'Techniques for three-dimensional circuit integration'20117,902,620'Suspended germanium photodetector for silicon waveguide'20117,897,428'Three-dimensional integrated circuits and techniques for fabrication thereof'20117,880,201'Optical modulator using a serpentine dielectric layer between silicon layers'20117,790,495'Optoelectronic device with germanium photodetector'20107,738,753'CMOS compatible integrated dielectric optical waveguide coupler and fabrication'20107,711,212'Junction field effect transistor geometry for optical modulators'20107,684,666'Method and apparatus for tuning an optical delay line'20107,567,738'Method and apparatus for minimizing propagation losses in wavelength selective filters'20097,536,069'Method and apparatus for resonant coupling in photonic crystal circuits'20097,515,793'Waveguide photodetector'20097,469,085'Method and apparatus for minimizing propagation losses in wavelength selective filters'20087,228,042'Method and apparatus for resonant coupling in photonic crystal circuits'20077,068,865'Method and apparatus for thermo-optic modulation of optical signals'20066,858,079'Self-assembled photonic crystals and methods for manufacturing same'20056,139,626'Three-dimensionally patterned materials and methods for manufacturing same using nanocrystals'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2005Based in Plainsboro, NJ, US· patent location history
2006–2020Patents assigned to IBM (64)· patent assignee history
2006–2020Based in Katonah, NY, US· patent location history
2012–2015Patents assigned to VLASOV YURII A (25)· patent assignee history
2012–2014Patents assigned to ASSEFA SOLOMON (11)· patent assignee history
2012–2014Patents assigned to GREEN WILLIAM M (10)· patent assignee history
2012–2014Based in Yorktown Heights, NY, US· patent location history
2013–2015Patents assigned to RYLYAKOV ALEXANDER V (8)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
IBM642006–2020
VLASOV YURII Aself252012–2015
ASSEFA SOLOMON112012–2014
GREEN WILLIAM M102012–2014
RYLYAKOV ALEXANDER V82013–2015
Locations
LocationPatentsSpan
Katonah, New York, US602006–2020
Yorktown Heights, New York, US62012–2014
Plainsboro, New Jersey, US22000–2005