Inventor
Eiji Oue
Inventor
Mobara, JP
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices58%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein9%
G02BOptical elements, systems or apparatus6%
H03FAmplifiers6%
H10KOrganic electric solid-state devices6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
H01LSemiconductor devices3%
PatentTitleYear
8,947,610'Display device comprising a TFT with a barrier metal formed of a first layer and a second layer wherein an amount of oxygen in the first layer is larger than in the second layer'20158,817,200'Liquid crystal display device comprising a TFT with a barrier metal formed of a first layer and a second layer wherein the first layer is denser than the second layer'20148,058,654'Display device and manufacturing method thereof'20117,952,102'Display device and manufacturing method thereof'20117,952,095'Display device and manufacturing method therefor'20117,704,810'Manufacturing method of display device'20107,671,370'Display device and fabrication method thereof'20107,535,024'Display device and fabrication method thereof'20097,524,685'Manufacturing method of a display device'20097,521,734'Semiconductor device with reduced base resistance'20097,407,853'Display device and manufacturing method of the same'20086,974,977'Heterojunction bipolar transistor'20056,956,255'Semiconductor device and drive circuit using the semiconductor devices'20056,905,934'Semiconductor device and a method of manufacturing the same'20056,815,822'BICMOS semiconductor integrated circuit device and fabrication process thereof'20046,600,178'Heterojunction bipolar transistor'20036,501,153'Semiconductor device and drive circuit using the semiconductor devices'20026,476,450'BICMOS semiconductor integrated circuit device and fabrication process thereof'20026,472,753'BICMOS semiconductor integrated circuit device and fabrication process thereof'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2005Patents assigned to HITACHI DEVICE ENG (6)· patent assignee history
2002–2004Patents assigned to HITACHI LTD (5)· patent assignee history
2002–2005Based in Ome, JP· patent location history
2002–2004Based in Oume, JP· patent location history
2008–2011Patents assigned to HITACHI DISPLAYS LTD (8)· patent assignee history
2008–2015Based in Mobara, JP· patent location history
2011–2014Patents assigned to OUE EIJI (2)· patent assignee history
2014–2015Patents assigned to JAPAN DISPLAY INC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI DISPLAYS LTD | 8 | 2008–2011 |
| HITACHI DEVICE ENG | 6 | 2002–2005 |
| HITACHI LTD | 5 | 2002–2004 |
| JAPAN DISPLAY INC | 2 | 2014–2015 |
| OUE EIJIself | 2 | 2011–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Mobara, JP | 11 | 2008–2015 |
| Ome, JP | 5 | 2002–2005 |
| Oume, JP | 3 | 2002–2004 |