Inventor
John M. Guerra
Inventor
Concord, MA, US
Overview
Patents· 38 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
Y10Sprimary
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests15%
B82YSpecific uses or applications of nanostructures14%
G11BInformation storage based on relative movement between record carrier and transducer14%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution8%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation6%
C25BElectrolytic or electrophoretic processes for the production of compounds or non-metals5%
G01BMeasuring length, thickness or similar linear dimensions5%
H01GCapacitors5%
G01QScanning-probe techniques or apparatus5%
G02BOptical elements, systems or apparatus5%
PatentTitleYear
10,717,169Lens holder and method of use202010,371,961Systems and methods for retention of lenses in eyeglass frames using elastic cushion connectors201910,055,929Automated eyewear kiosk201810,050,319Photoelectrochemical secondary cell and battery20189,847,439Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same20178,673,399'Bandgap-shifted semiconductor surface and method for making same, and apparatus for using same'20147,995,871'Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same'20117,992,528'Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same'20117,947,221'Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same'20117,628,928'Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same'20097,485,799'Stress-induced bandgap-shifted semiconductor photoelectrolytic/photocatalytic/photovoltaic surface and method for making same'20096,969,472'Method of fabricating sub-micron hemispherical and hemicylidrical structures from non-spherically shaped templates'20056,885,618'Optical disk initialization method and apparatus'20056,665,245'Optical disk initialization method and apparatus'20036,587,429'System and method for initializing phase change recording media'20036,396,789'Data storage system and methods using diffractive near-field optics'20026,249,507'Information storage systems utilizing media with optically-differentiated data sites'20016,115,348'Information storage systems utilizing media with optically-differentiated data sites'20006,094,413'Optical recording systems'20006,014,166'Stereoscopic photon tunneling microscope'20005,910,940'Storage medium having a layer of micro-optical lenses each lens generating an evanescent field'19995,796,487'Dark field, photon tunneling imaging systems and methods for optical recording and retrieval'19985,774,221'Apparatus and methods for providing phase controlled evanescent illumination'19985,754,514'Phase controlled evanescent field systems and methods for optical recording and retrieval'19985,724,139'Dark field, photon tunneling imaging probes'19985,719,677'Dark field, photon tunneling imaging systems and methods for measuring flying height of read/write heads'19985,715,059'Dark field, photon tunneling imaging systems and methods'19985,666,197'Apparatus and methods employing phase control and analysis of evanescent illumination for imaging and metrology of subwavelength lateral surface topography'19975,484,558'Method for making flexible transducers for use with photon tunneling microscopes'19965,442,443'Stereoscopic photon tunneling microscope'19955,349,443'Flexible transducers for photon tunneling microscopes and methods for making and using same'19944,843,494'Data storage apparatus using optical servo tracks'19894,681,451'Optical proximity imaging method and apparatus'19874,673,818'Roughness measuring apparatus'19874,649,324'Method and apparatus for adjusting CRT geometry'19874,415,958'Device for illuminating transparencies'19834,269,170'Adsorption solar heating and storage system'19814,038,669'Cryogenic cameras'1977Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1977Based in West Newton, MA, US· patent location history
1981–2018Patents assigned to GUERRA JOHN M (5)· patent assignee history
1981–1983Based in Brighton, MA, US· patent location history
1983–2003Patents assigned to POLAROID CORP (19)· patent assignee history
1987–2018Based in Concord, MA, US· patent location history
2000–2002Patents assigned to CALIMETRICS INC (2)· patent assignee history
2011–2017Patents assigned to NANOPTEK CORP (4)· patent assignee history
2018–2020Patents assigned to ESSILOR INT (3)· patent assignee history
2018–2020Based in Dallas, TX, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| POLAROID CORP | 19 | 1983–2003 |
| GUERRA JOHN Mself | 5 | 1981–2018 |
| NANOPTEK CORP | 4 | 2011–2017 |
| ESSILOR INT | 3 | 2018–2020 |
| CALIMETRICS INC | 2 | 2000–2002 |
Locations
| Location | Patents | Span |
|---|---|---|
| Concord, Massachusetts, US | 32 | 1987–2018 |
| Dallas, Texas, US | 3 | 2018–2020 |
| Brighton, Massachusetts, US | 2 | 1981–1983 |
| West Newton, Massachusetts, US | 1 | 1977 |