Inventor
Morio Hosoya
Inventor
Tokyo, JP
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G03Fprimary
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices31%
B82YSpecific uses or applications of nanostructures27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
C03CChemical composition of glasses, glazes or vitreous enamels8%
G21KHandling of particles or ionising radiation not otherwise provided for6%
Y10TTechnical subjects covered by former us classification6%
G02BOptical elements, systems or apparatus4%
C23CCoating metallic material2%
H01LSemiconductor devices2%
PatentTitleYear
9,229,315'Reflective mask blank and method of manufacturing a reflective mask'20169,075,314'Photomask blank, photomask, and method for manufacturing photomask blank'20158,709,685'Reflective mask blank and method of manufacturing a reflective mask'20148,546,047'Reflective mask blank and method of manufacturing a reflective mask'20138,512,916'Photomask blank, photomask, and method for manufacturing photomask blank'20138,389,184'Reflective mask blank and method of manufacturing a reflective mask'20138,329,361'Reflective mask blank, method of manufacturing a reflective mask blank and method of manufacturing a reflective mask'20128,081,384'Multilayer reflective film coated substrate, manufacturing method thereof, reflective mask blank, and reflective mask'20118,021,807'Reflective mask blank and method of producing the same, and method of producing a reflective mask'20117,981,573'Reflective mask blank, reflective mask and methods of producing the mask blank and the mask'20117,804,648'Multilayer reflective film coated substrate, manufacturing method thereof, reflective mask blank, and reflective mask'20107,700,245'Reflective mask blank, reflective mask, and method of manufacturing semiconductor device'20107,390,596'Reflection type mask blank and reflection type mask and production methods for them'20087,056,627'Method of manufacturing a reflection type mask blank and method of manufacturing a reflection type mask'20066,749,973'Reflection type mask blank for EUV exposure and reflection type mask for EUV exposure as well as method of producing the mask'20046,737,201'Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device'2004Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2004–2016Patents assigned to HOYA CORP (16)· patent assignee history
2004–2015Based in Tokyo, JP· patent location history
2004Based in Musashino, JP· patent location history
2011–2013Patents assigned to HOSOYA MORIO (5)· patent assignee history
2011Patents assigned to IKEDA AKIRA (1)· patent assignee history
2011–2016Based in Shinjuku-ku, JP· patent location history
2013Patents assigned to HASHIMOTO MASAHIRO (1)· patent assignee history
2013Patents assigned to IWASHITA HIROYUKI (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HOYA CORP | 16 | 2004–2016 |
| HOSOYA MORIOself | 5 | 2011–2013 |
| HASHIMOTO MASAHIRO | 1 | 2013 |
| IKEDA AKIRA | 1 | 2011 |
| IWASHITA HIROYUKI | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 12 | 2004–2015 |
| Shinjuku-ku, JP | 3 | 2011–2016 |
| Musashino, JP | 1 | 2004 |