Inventor

Hong-Sik Jeong

Inventor
Suwon-si, KR

Overview

23→
Patents
2001–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 23 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices26%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%
H10DInorganic electric semiconductor devices16%
H10NElectric solid-state devices not otherwise provided for12%
G11CStatic stores10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
B82YSpecific uses or applications of nanostructures2%
G06NComputing arrangements based on specific computational models2%
H01LSemiconductor devices2%
PatentTitleYear
10,014,348Artificial neuron semiconductor element having three-dimensional structure and artificial neuron semiconductor system using same20188,320,170'Multi-bit phase change memory devices'20128,043,924'Methods of forming phase-change memory units, and methods of manufacturing phase-change memory devices using the same'20117,916,538'Memory device employing NVRAM and flash memory cells'20117,843,741'Memory devices with selective pre-write verification and methods of operation thereof'20107,700,430'Phase-changeable memory device and method of manufacturing the same'20107,569,401'Magnetic random access memory cells having split subdigit lines having cladding layers thereon and methods of fabricating the same'20097,510,963'Semiconductor device having multilayer interconnection structure and manufacturing method thereof'20097,462,523'Semiconductor memory device and method for manufacturing the same'20087,300,888'Methods of manufacturing integrated circuit devices having an encapsulated insulation layer'20077,295,463'Phase-changeable memory device and method of manufacturing the same'20077,164,598'Methods of operating magnetic random access memory device using spin injection and related devices'20076,900,546'Semiconductor memory device and method for manufacturing the same'20056,836,019'Semiconductor device having multilayer interconnection structure and manufacturing method thereof'20046,815,300'Method for manufacturing semiconductor device having increased effective channel length'20046,812,572'Bit line landing pad and borderless contact on bit line stud with localized etch stop layer formed in void region, and manufacturing method thereof'20046,787,906'Bit line pad and borderless contact on bit line stud with localized etch stop layer formed in an undermined region'20046,764,941'Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof'20046,720,276'Methods of forming spin on glass layers by curing remaining portions thereof'20046,656,790'Method for manufacturing a semiconductor device including storage nodes of capacitor'20036,518,671'Bit line landing pad and borderless contact on bit line stud with localized etch stop layer and manufacturing method thereof'20036,350,649'Bit line landing pad and borderless contact on bit line stud with etch stop layer and manufacturing method thereof'20026,177,320'Method for forming a self aligned contact in a semiconductor device'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2012Patents assigned to SAMSUNG ELECTRONICS CO LTD (22)· patent assignee history
2001–2008Based in Kyungki-do, KR· patent location history
2002–2009Based in Suwon-si, KR· patent location history
2007–2011Based in Gyeonggi-do, KR· patent location history
2007–2010Based in Yongin-si, KR· patent location history
2012Patents assigned to HWANG YOUNG-NAM (1)· patent assignee history
2012Patents assigned to JEONG GI-TAE (1)· patent assignee history
2012Patents assigned to JEONG HONG-SIK (1)· patent assignee history
2012Patents assigned to PARK SOON-OH (1)· patent assignee history
2012–2018Based in Seongnam-si, KR· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SAMSUNG ELECTRONICS CO LTD222001–2012
HWANG YOUNG-NAM12012
JEONG GI-TAE12012
JEONG HONG-SIKself12012
PARK SOON-OH12012
Locations
LocationPatentsSpan
Suwon-si, KR82002–2009
Kyungki-do, KR62001–2008
Gyeonggi-do, KR52007–2011
Seongnam-si, KR22012–2018
Yongin-si, KR22007–2010