Inventor
Anco Heringa
Inventor
Waalre, NL
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices39%
H01LSemiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
H03KPulse technique5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
G01RMeasuring electric variables3%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
H10NElectric solid-state devices not otherwise provided for3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
G01TMeasurement of nuclear or x-radiation2%
PatentTitleYear
10,043,894Transistor amplifier circuit and integrated circuit201810,014,398Bipolar transistor device and method of fabrication20189,762,226'Semiconductor device having control conductors'20179,666,598'Semiconductor device with an integrated heat sink array'20179,666,667'Apparatuses and methods including a superjunction transistor'20179,515,644'Semiconductor device and circuit with dynamic control of electric field'20169,508,693'Semiconductor device with heat sinks'20169,443,773'IC and IC manufacturing method'20169,425,258'Semiconductor device'20169,368,963'ESD protection'20169,240,468'Bipolar transistor having laterally extending collector'20169,142,625'Field plate assisted resistance reduction in a semiconductor device'20158,981,442'Semiconductor magnetic field sensors'20158,729,652'Semiconductor device for radiation detection'20148,659,104'Field-effect magnetic sensor'20148,541,267'FinFET transistor with high-voltage capability and CMOS-compatible method for fabricating the same'20138,390,077'Integration of low and high voltage CMOS devices'20138,373,227'Semiconductor device and method having trenches in a drain extension region'20138,247,280'Integration of low and high voltage CMOS devices'20128,216,908'Extended drain transistor and method of manufacturing the same'20128,202,782'Method of manufacturing transistor'20127,808,050'Semiconductor device with relatively high breakdown voltage and manufacturing method'20107,790,589'Method of providing enhanced breakdown by diluted doping profiles in high-voltage transistors'20107,786,506'Semiconductor devices with a field shaping region'20107,759,650'Implementation of avalanche photo diodes in (Bi)CMOS processes'20107,423,299'Semiconductor devices with a field shaping region'20086,933,559'LDMOS with guard ring (of same type as drain) surrounding the drain'20056,797,615'Method of manufacturing a semiconductor device'20046,387,769'Method of producing a schottky varicap'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2015Based in Eindhoven, NL· patent location history
2004–2010Patents assigned to KONINKL PHILIPS ELECTRONICS NV (3)· patent assignee history
2008–2018Patents assigned to NXP BV (21)· patent assignee history
2008–2018Based in Waalre, NL· patent location history
2012–2016Patents assigned to HERINGA ANCO (9)· patent assignee history
2012–2013Patents assigned to SONSKY JAN (4)· patent assignee history
2012–2013Patents assigned to TAIWAN SEMICONDUCTOR MFG (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NXP BV | 21 | 2008–2018 |
| HERINGA ANCOself | 9 | 2012–2016 |
| SONSKY JAN | 4 | 2012–2013 |
| KONINKL PHILIPS ELECTRONICS NV | 3 | 2004–2010 |
| TAIWAN SEMICONDUCTOR MFG | 2 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Waalre, NL | 24 | 2008–2018 |
| Eindhoven, NL | 5 | 2002–2015 |