Inventor
Frédéric Voiron
Inventor
FR
Overview
Patents· 23 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices26%
H01LSemiconductor devices19%
H01GCapacitors15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
C25DProcesses for the electrolytic or electrophoretic production of coatings10%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
H01FMagnets3%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution3%
B82YSpecific uses or applications of nanostructures1%
G01NInvestigating or analysing materials by determining their chemical or physical properties1%
PatentTitleYear
12,477,758Semiconductor structure enhanced for high voltage applications202512,431,391Method of fabricating a semiconductor structure with improved dicing properties202512,431,291Capacitor structure with via embedded in porous medium202512,406,811Device having an anodic porous region surrounded by a trench having an electrical isolation barrier202512,400,921Through-interposer grounding using blind vias202512,402,333Electronic component comprising a 3D capacitive structure202512,381,041Electrical device comprising a capacitor wherein the dielectric comprises anodic porous oxide, and the corresponding manufacturing method202512,371,808Method for forming product structure having porous regions and lateral encapsulation202512,347,790Semiconductor structure with crack-blocking three-dimensional structure202512,336,241Manufacturing method of a nanowire-based structure and capacitor array component including the structure202512,336,293Semiconductor structure with selective bottom terminal contacting202512,302,589Trench capacitor structure with hybrid filling layer202512,191,064Nanomagnetic inductor cores, inductors and devices incorporating such cores, and associated manufacturing methods202512,054,838Semiconductor device having porous region embedded structure and method of manufacture thereof202411,978,766Three-dimensional capacitive structures and their manufacturing methods202411,955,568Trench capacitor structure with hybrid filling layer202411,948,719Nanomagnetic inductor cores, inductors and devices incorporating such cores, and associated manufacturing methods202411,862,834Distributed LC filter structure202411,823,836Low defect high capacitance thin solid electrolyte capacitor and method of fabrication thereof202311,705,484Nanowire structure enhanced for stack deposition202311,581,139Integrated energy storage component202311,538,637Substrates employing surface-area amplification, for use in fabricating capacitive elements and other devices202211,316,006Porous region structure and method of manufacture thereof2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to MURATA MANUFACTURING CO (23)· patent assignee history
2022–2025Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (9)· patent assignee history
2022–2025Based in FR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MURATA MANUFACTURING CO | 23 | 2022–2025 |
| COMMISSARIAT ENERGIE ATOMIQUE | 9 | 2022–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| FR | 23 | 2022–2025 |