Inventor
Tsung-Che Tsai
Inventor
Hsinchu, TW
Overview
Patents· 31 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices39%
H01LSemiconductor devices34%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
H02HEmergency protective circuit arrangements6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h105%
PatentTitleYear
10,692,852Silicon-controlled rectifiers with wells laterally isolated by trench isolation regions202010,541,236Electrostatic discharge devices with reduced capacitance202010,381,826Integrated circuit electrostatic discharge protection201910,361,293Vertical fin-type devices and methods201910,340,266ESD protection circuit and method of making the same201910,290,626High voltage electrostatic discharge (ESD) bipolar integrated in a vertical field-effect transistor (VFET) technology and method for producing the same201910,170,459Methods for an ESD protection circuit including a floating ESD node201910,134,726Diode string implementation for electrostatic discharge protection201810,096,587Fin-based diode structures with a realigned feature layout201810,037,988High voltage PNP using isolation for ESD and method for producing the same201810,032,765Integrated circuits with electrostatic discharge protection and methods for producing the same201810,032,761Electronic devices with tunable electrostatic discharge protection and methods for producing the same20189,929,143'N-type metal oxide semiconductor (NMOS) transistor for electrostatic discharge (ESD)'20189,922,969'Integrated circuits having transistors with high holding voltage and methods of producing the same'20189,887,275'Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching'20189,741,849'Integrated circuits resistant to electrostatic discharge and methods for producing the same'20179,601,627'Diode structure compatible with FinFET process'20179,576,945'Methods and apparatus for increased holding voltage in silicon controlled rectifiers for ESD protection'20179,548,367'Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching and the FinFETs thereof'20179,484,338'Diode string implementation for electrostatic discharge protection'20169,368,629'Diode structure compatible with FinFET process'20169,236,733'Electrostatic discharge protection'20169,214,540'N-type metal oxide semiconductor (NMOS) transistor for electrostatic discharge (ESD)'20159,209,265'ESD devices comprising semiconductor fins'20159,209,302'Method of reducing the heights of source-drain sidewall spacers of FinFETs through etching'20159,093,492'Diode structure compatible with FinFET process'20158,963,200'Methods and apparatus for increased holding voltage in silicon controlled rectifiers for ESD protection'20158,906,767'Semiconductor device with self-aligned interconnects'20148,809,961'Electrostatic discharge (ESD) guard ring protective structure'20148,610,220'Semiconductor device with self-aligned interconnects'20138,587,071'Electrostatic discharge (ESD) guard ring protective structure'2013Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2013–2016Patents assigned to TAIWAN SEMICONDUCTOR MFG (11)· patent assignee history
2013–2015Patents assigned to LEE JAM-WEM (3)· patent assignee history
2013–2018Based in Hsinchu, TW· patent location history
2016–2018Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (8)· patent assignee history
2016Based in Taiwan, CN· patent location history
2017–2019Patents assigned to GLOBALFOUNDRIES SG PTE LTD (8)· patent assignee history
2017–2019Based in Singapore, SG· patent location history
2018–2020Patents assigned to GLOBALFOUNDRIES INC (5)· patent assignee history
2018–2020Based in Essex Junction, VT, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG | 11 | 2013–2016 |
| GLOBALFOUNDRIES SG PTE LTD | 8 | 2017–2019 |
| TAIWAN SEMICONDUCTOR MFG CO LTD | 8 | 2016–2018 |
| GLOBALFOUNDRIES INC | 5 | 2018–2020 |
| LEE JAM-WEM | 3 | 2013–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 17 | 2013–2018 |
| Singapore, SG | 8 | 2017–2019 |
| Essex Junction, VT, US | 5 | 2018–2020 |
| Taiwan, CN | 1 | 2016 |