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Inventor

Mitsuru Ura

Inventor
Hitachi, JP

Overview

17→
Patents
1976–1987
Patent span
Electricity
Primary field (CPC H)

Patents· 17 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Wprimary
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1015%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
Y10TTechnical subjects covered by former us classification11%
C04BLime, magnesia9%
C23CCoating metallic material7%
H10DInorganic electric semiconductor devices7%
H05KPrinted circuits4%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form2%
PatentTitleYear
4,651,192'Ceramic packaged semiconductor device'19874,585,706'Sintered aluminum nitride semi-conductor device'19864,561,010'Electrically insulating silicon carbide sintered body'19854,540,673'Sintered aluminum nitride and semi-conductor device using the same'19854,517,584'Ceramic packaged semiconductor device'19854,472,028'Organosilicone homeotropic alignment layer with OH group'19844,467,309'High temperature thermistor'19844,299,873'Multilayer circuit board'19814,269,899'Surface hafnium-titanium carbide coated hard alloy and method'19814,264,682'Surface hafnium-titanium compound coated hard alloy material and method of producing the same'19814,200,877'Temperature-compensated voltage reference diode with intermediate polycrystalline layer'19804,177,114'Silver-electroplating process'19794,164,436'Process for preparation of semiconductor devices utilizing a two-step polycrystalline deposition technique to form a diffusion source'19794,146,906'Low forward voltage drop semiconductor device having polycrystalline layers of different resistivity'19794,100,310'Method of doping inpurities'19784,008,485'Gallium arsenide infrared light emitting diode'19773,998,672'Method of producing infrared luminescent diodes'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1976–1987Patents assigned to HITACHI LTD (15)· patent assignee history
1976–1987Based in Hitachi, JP· patent location history
1979Based in Ibaraki, JP· patent location history
1981Patents assigned to HITACHI METALS LTD (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
HITACHI LTD151976–1987
HITACHI METALS LTD21981
Locations
LocationPatentsSpan
Hitachi, JP161976–1987
Ibaraki, JP11979