Inventor

Noboru Fukuhara

Inventor
Tsukuba, JP

Overview

23→
Patents
1990–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 23 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices31%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1031%
H01LSemiconductor devices10%
C30BSingle-crystal growth6%
G01RMeasuring electric variables4%
H10HInorganic light-emitting semiconductor devices having potential barriers4%
C23CCoating metallic material2%
G01NInvestigating or analysing materials by determining their chemical or physical properties2%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light2%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation2%
PatentTitleYear
11,114,296Semiconductor wafer, electronic device, method of performing inspection on semiconductor wafer, and method of manufacturing electronic device20219,755,040'Semiconductor wafer, method of producing semiconductor wafer and electronic device'20179,379,226'Semiconductor wafer and insulated gate field effect transistor'20168,901,656'Semiconductor wafer, field-effect transistor, method of producing semiconductor wafer, and method of producing field-effect transistor'20148,890,213'Semiconductor wafer, electronic device, a method of producing semiconductor wafer, and method of producing electronic device'20148,803,197'Semiconductor wafer, insulated gate field effect transistor, and method for producing semiconductor wafer'20148,779,471'Field-effect transistor, semiconductor wafer, method for producing field-effect transistor and method for producing semiconductor wafer'20148,610,450'Method of measuring electrical characteristics of semiconductor wafer'20137,923,752'Thin-film crystal wafer having pn junction and method for fabricating the wafer'20117,576,352'Method for producing compound semiconductor wafer and compound semiconductor device'20097,550,786'Compound semiconductor epitaxial substrate'20097,304,332'Compound semiconductor epitaxial substrate and method for manufacturing same'20077,291,873'High electron mobility epitaxial substrate'20077,208,387'Method for manufacturing compound semiconductor wafer and compound semiconductor device'20076,744,078'Heterojunction structure with a charge compensation layer formed between two group III-V semiconductor layers'20046,388,323'Electrode material and electrode for III-V group compound semiconductor'20025,708,301'Electrode material and electrode for III-V group compound semiconductor'19985,603,764'Process for crystal growth of III-V group compound semiconductor'19975,569,954'Epitaxial In.sub.x Ga.sub.(1-x) As having a slanted crystallographic plane azimuth'19965,441,913'Process of making a semiconductor epitaxial substrate'19955,332,451'Epitaxially grown compound-semiconductor crystal'19945,064,778'Vapor-phase epitaxial growth method'19914,976,216'Apparatus for vapor-phase growth'1990

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990–2021Patents assigned to SUMITOMO CHEMICAL CO (22)· patent assignee history
1990–1991Based in Osaka, JP· patent location history
1994–2021Based in Ibaraki, JP· patent location history
1995–2016Based in Tsukuba, JP· patent location history
2007–2009Patents assigned to SUMIKA EPI SOLUTION COMPANY LT (5)· patent assignee history
2013–2014Patents assigned to FUKUHARA NOBORU (3)· patent assignee history
2013–2014Patents assigned to HATA MASAHIKO (3)· patent assignee history
2014Patents assigned to NAT INST OF ADVANCED IND SCIEN (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO CHEMICAL CO221990–2021
SUMIKA EPI SOLUTION COMPANY LT52007–2009
FUKUHARA NOBORUself32013–2014
HATA MASAHIKO32013–2014
NAT INST OF ADVANCED IND SCIEN22014
Locations
LocationPatentsSpan
Tsukuba, JP151995–2016
Ibaraki, JP61994–2021
Osaka, JP21990–1991