LexDanaLexDanabeta
Inventor

Umesh Mishra

Inventor
Montecito, CA, US

Overview

148→
Patents
1991–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 148 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices30%
H01LSemiconductor devices15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
H10HInorganic light-emitting semiconductor devices having potential barriers9%
C30BSingle-crystal growth5%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light3%
B82YSpecific uses or applications of nanostructures2%
Y10TTechnical subjects covered by former us classification2%
H03KPulse technique2%
PatentTitleYear
11,121,216III-nitride devices including a graded depleting layer202111,101,379Structure for increasing mobility in a high electron mobility transistor202110,756,207Lateral III-nitride devices including a vertical gate module202010,629,681III-nitride devices including a graded depleting layer202010,529,892Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices202010,312,361Trenched vertical power field-effect transistors with improved on-resistance and breakdown voltage201910,224,427Insulting gate AlGaN/GaN HEMT201910,224,401III-nitride devices including a graded depleting layer201910,199,217Methods of forming reverse side engineered III-nitride devices201910,109,713Fabrication of single or multiple gate field plates201810,043,896III-Nitride transistor including a III-N depleting layer20189,941,399Enhancement mode III-N HEMTs20189,935,190Forming enhancement mode III-nitride devices20189,842,922'III-nitride transistor including a p-type depleting layer'20179,793,435'Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices'20179,773,877'Wide bandgap field effect transistors with source connected field plates'20179,691,712'Method of controlling stress in group-III nitride films deposited on substrates'20179,634,100'Semiconductor devices with integrated hole collectors'20179,590,088'Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown p-type gallium nitride as a current blocking layer'20179,520,491'Electrodes for semiconductor devices and methods of forming the same'20169,496,137'Methods of forming reverse side engineered III-nitride devices'20169,496,353'Fabrication of single or multiple gate field plates'20169,490,324'N-polar III-nitride transistors'20169,450,081'High voltage GaN transistor'20169,443,938'III-nitride transistor including a p-type depleting layer'20169,443,849'Semiconductor electronic components with integrated current limiters'20169,437,708'Enhancement mode III-N HEMTs'20169,437,707'Transistors with isolation regions'20169,419,124'Insulating gate AlGaN/GaN HEMT'20169,343,560'Gallium nitride power devices'20169,318,593'Forming enhancement mode III-nitride devices'20169,293,561'High voltage III-nitride semiconductor devices'20169,293,458'Semiconductor electronic components and circuits'20169,281,183'Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge'20169,263,423'Interdigitated multiple pixel arrays of light-emitting devices'20169,231,376'Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices'20169,226,383'Group III nitride based flip-chip integrated circuit and method for fabricating'20159,224,596'Methods of fabricating thick semi-insulating or insulating epitaxial gallium nitride layers'20159,224,805'Semiconductor devices with guard rings'20159,224,671'III-N device structures and methods'20159,196,716'Enhancement mode III-N HEMTs'20159,184,275'Semiconductor devices with integrated hole collectors'20159,171,910'Semiconductor electronic components with integrated current limiters'20159,171,730'Electrodes for semiconductor devices and methods of forming the same'20159,171,836'Method of forming electronic components with increased reliability'20159,147,760'Transistors with isolation regions'20159,129,977'Method of controlling stress in group-III nitride films deposited on substrates'20159,096,939'Electrolysis transistor'20159,093,366'N-polar III-nitride transistors'20159,076,927'(In,Ga,Al)N optoelectronic devices grown on relaxed (In,Ga,Al)N-on-GaN base layers'20159,076,711'Interdigitated multiple pixel arrays of light-emitting devices'20159,041,064'High voltage GaN transistor'20159,041,065'Semiconductor heterostructure diodes'20158,937,338'Current aperture vertical electron transistors with ammonia molecular beam epitaxy grown P-type gallium nitride as a current blocking layer'20158,922,110'Interdigitated multiple pixel arrays of light-emitting devices'20148,901,604'Semiconductor devices with guard rings'20148,895,421'III-N device structures and methods'20148,882,935'Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition'20148,878,249'Method for heteroepitaxial growth of high channel conductivity and high breakdown voltage nitrogen polar high electron mobility transistors'20148,860,495'Method of forming electronic components with increased reliability'20148,841,702'Enhancement mode III-N HEMTs'20148,803,246'Semiconductor electronic components with integrated current limiters'20148,803,313'Group III nitride based flip-chip integrated circuit and method for fabricating'20148,796,912'Interdigitated multiple pixel arrays of light-emitting devices'20148,742,459'High voltage III-nitride semiconductor devices'20148,742,460'Transistors with isolation regions'20148,686,466'Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices'20148,664,695'Wide bandgap transistors with multiple field plates'20148,643,062'III-N device structures and methods'20148,643,024'In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N'20148,633,518'Gallium nitride power devices'20148,624,662'Semiconductor electronic components and circuits'20148,598,937'High power semiconductor electronic components with increased reliability'20138,592,867'Wide bandgap HEMTS with source connected field plates'20138,575,651'Devices having thick semi-insulating epitaxial gallium nitride layer'20138,558,285'Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials'20138,541,818'Semiconductor heterostructure diodes'20138,525,230'Field-effect transistor with compositionally graded nitride layer on a silicaon substrate'20138,519,438'Enhancement mode III-N HEMTs'20138,502,246'Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition'20138,455,885'Method for heteroepitaxial growth of high-quality N-face gallium nitride, indium nitride, and aluminum nitride and their alloys by metal organic chemical vapor deposition'20138,389,977'Reverse side engineered III-nitride devices'20138,344,424'Enhancement mode gallium nitride power devices'20138,334,151'Method for fabricating a direct wafer bonded optoelectronic device'20128,324,637'High efficiency LEDs with tunnel junctions'20128,274,206'Interdigitated multiple pixel arrays of light-emitting devices'20128,274,159'Group III nitride based flip-chip integrated circuit and method for fabricating'20128,237,198'Semiconductor heterostructure diodes'20128,193,562'Enhancement mode gallium nitride power devices'20128,193,020'Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AlN and their alloys by metal organic chemical vapor deposition'20128,188,458'Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices'20128,169,005'High voltage GaN transistors'20128,147,659'Gated electrodes for electrolysis and electrosynthesis'20128,124,957'Low resistance tunnel junctions in wide band gap materials and method of making same'20128,114,717'Methods to shape the electric field in electron devices, passivate dislocations and point defects, and enhance the luminescence efficiency of optical devices'20128,105,919'In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N'20128,039,352'Polarization-induced barriers for N-face nitride-based electronics'20117,994,512'Gallium nitride based diodes with low forward voltage and low reverse current operation'20117,982,208'Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices'20117,948,011'N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor'20117,935,985'N-face high electron mobility transistors with low buffer leakage and low parasitic resistance'20117,915,644'Wide bandgap HEMTs with source connected field plates'20117,915,643'Enhancement mode gallium nitride power devices'20117,911,126'Interdigitated multiple pixel arrays of light-emitting devices'20117,898,004'Semiconductor heterostructure diodes'20117,893,500'High voltage GaN transistors'20117,851,909'Group III nitride based flip-chip integrated circuit and method for fabricating'20107,851,825'Insulated gate e-mode transistors'20107,846,757'Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices'20107,812,369'Fabrication of single or multiple gate field plates'20107,737,451'High efficiency LED with tunnel junction layer'20107,728,356'P-GaN/AlGaN/AlN/GaN enhancement-mode field effect transistor'20107,723,216'In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In)N'20107,719,020'(Al,Ga,In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method'20107,700,973'GaN/AlGaN/GaN dispersion-free high electron mobility transistors'20107,692,263'High voltage GaN transistors'20107,573,078'Wide bandgap transistors with multiple field plates'20097,566,580'Method for heteroepitaxial growth of high-quality N-face GaN, InN, and AIN and their alloys by metal organic chemical vapor deposition'20097,550,783'Wide bandgap HEMTs with source connected field plates'20097,525,130'Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same'20097,518,305'Interdigitated multi-pixel arrays for the fabrication of light-emitting devices with very low series-resistances and improved heat-sinking'20097,504,274'Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition'20097,476,956'Gallium nitride based diodes with low forward voltage and low reverse current operation'20097,388,236'High efficiency and/or high power density wide bandgap transistors'20087,354,782'Group III nitride based flip-chip integrated circuit and method for fabricating'20087,344,958'Method for wafer bonding (A1, In, Ga)N and Zn(S, Se) for optoelectronic applications'20087,332,365'Method for fabricating group-III nitride devices and devices fabricated using method'20087,230,284'Insulating gate AlGaN/GaN HEMT'20077,186,302'Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition'20077,126,426'Cascode amplifier structures including wide bandgap field effect transistor with field plates'20067,091,514'Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices'20066,949,774'Gallium nitride based diodes with low forward voltage and low reverse current operation'20056,849,882'Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer'20056,825,559'Group III nitride based flip-chip intergrated circuit and method for fabricating'20046,610,144'Method to reduce the dislocation density in group III-nitride films'20036,261,931'High quality, semi-insulating gallium nitride and method and system for forming same'20015,891,790'Method for the growth of P-type gallium nitride and its alloys'19995,872,031'Enhancement-depletion logic based on gaas mosfets'19995,798,555'Enhancement-depletion logic based on Ge mosfets'19985,795,798'Method of making full color monolithic gan based leds'19985,780,922'Ultra-low phase noise GE MOSFETs'19985,780,355'UV assisted gallium nitride growth'19985,747,838'Ultra-low phase noise GaAs MOSFETs'19985,180,681'Method of making high current, high voltage breakdown field effect transistor'19935,172,197'Hemt structure with passivated donor layer'19925,084,743'High current, high voltage breakdown field effect transistor'19925,077,597'Microelectronic electron emitter'19915,053,348'Fabrication of self-aligned, T-gate HEMT'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–1993Based in Cary, NC, US· patent location history
1991Based in Goleta, CA, US· patent location history
1998–2021Patents assigned to UNIV CALIFORNIA (58)· patent assignee history
1998–2019Based in Santa Barbara, CA, US· patent location history
2004–2019Patents assigned to CREE INC (34)· patent assignee history
2008–2021Based in Montecito, CA, US· patent location history
2010–2020Patents assigned to TRANSPHORM INC (49)· patent assignee history
2012–2019Patents assigned to MISHRA UMESH (25)· patent assignee history
2012–2016Patents assigned to MISHRA UMESH K (18)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
UNIV CALIFORNIA581998–2021
TRANSPHORM INC492010–2020
CREE INC342004–2019
MISHRA UMESHself252012–2019
MISHRA UMESH Kself182012–2016
Locations
LocationPatentsSpan
Montecito, California, US1102008–2021
Santa Barbara, California, US331998–2019
Cary, NC, US41991–1993
Goleta, California, US11991