Inventor
Yoichiro Mitani
Inventor
Tokyo, JP
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth17%
H01LSemiconductor devices17%
H02PControl or regulation of electric motors, electric generators or dynamo-electric converters17%
H10DInorganic electric semiconductor devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems8%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications8%
PatentTitleYear
10,964,785SiC epitaxial wafer and manufacturing method of the same202110,950,435SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus202110,910,218SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatus20216,337,561'Apparatus for stabilizing a power system adapted to generating systems'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002Patents assigned to CHUBU ELECTRIC POWER (1)· patent assignee history
2002Patents assigned to TOSHIBA KK (1)· patent assignee history
2002Based in Nagoya, JP· patent location history
2021Patents assigned to MITSUBISHI ELECTRIC CORP (2)· patent assignee history
2021Based in Tokyo, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI ELECTRIC CORP | 2 | 2021 |
| CHUBU ELECTRIC POWER | 1 | 2002 |
| TOSHIBA KK | 1 | 2002 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 3 | 2021 |
| Nagoya, JP | 1 | 2002 |