Inventor
Hiroyuki Kanaya
Inventor
Yokohama, JP
Overview
Patents· 56 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices36%
H10DInorganic electric semiconductor devices26%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
H10NElectric solid-state devices not otherwise provided for8%
H01LSemiconductor devices6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
G11CStatic stores5%
H04BTransmission1%
C23CCoating metallic material1%
G01RMeasuring electric variables1%
PatentTitleYear
10,115,891Magnetoresistive memory device and manufacturing method of the same201810,043,852Magnetoresistive memory device and manufacturing method of the same20189,887,237'Magnetic storage device'20189,306,152'Magnetic memory and method for manufacturing the same'20169,276,195'Magnetic random access memory'20169,171,886'Semiconductor memory device and manufacturing method thereof'20159,105,572'Magnetic memory and manufacturing method thereof'20159,076,720'Magnetic random access memory and a method of fabricating the same'20158,969,983'Semiconductor storage device and manufacturing method thereof'20158,786,038'Semiconductor storage device and method of manufacturing the same'20148,592,928'Magnetic random access memory and method of manufacturing the same'20138,080,841'Semiconductor device having a ferroelectric capacitor and method of manufacturing the same'20117,888,139'Fabricating method of nonvolatile semiconductor storage apparatus'20117,821,049'Semiconductor memory device and method for fabricating semiconductor memory device'20107,750,383'Semiconductor apparatus and method for manufacturing the semiconductor apparatus'20107,700,987'Ferroelectric memory device and method of manufacturing the same'20107,573,120'Semiconductor device and method of manufacturing the same'20097,531,408'Method of manufacturing a semiconductor device containing a PbxSr(1-x)[Zr,Ti]xRu(1-x)O3 film in a capacitor'20097,508,020'Semiconductor device and method of manufacturing the same'20097,504,684'Semiconductor device and manufacturing method therefor'20097,501,675'Semiconductor device and method of manufacturing the same'20097,446,362'Semiconductor memory device and method of manufacturing the same'20087,429,508'Semiconductor memory device and method of manufacturing the same'20087,402,858'Semiconductor memory device and method of manufacturing the same'20087,400,005'Semiconductor memory device having ferroelectric capacitors with hydrogen barriers'20087,339,218'Semiconductor memory device and method of manufacturing the same'20087,259,094'Apparatus and method for heat treating thin film'20077,233,040'Semiconductor device contains a PbxSr(1−x)[Zr, Ti]xRu(1−x)O3 film in a capacitor'20077,190,015'Semiconductor device and method of manufacturing the same'20077,095,068'Semiconductor memory device having ferroelectric capacitor and method of manufacturing the same'20067,091,538'Semiconductor device and method for manufacturing the same'20067,045,837'Hardmask with high selectivity for Ir barriers for ferroelectric capacitor manufacturing'20067,022,531'Semiconductor memory device and method of fabricating the same'20067,001,780'Method of fabrication of an FeRAM capacitor and an FeRAM capacitor formed by the method'20066,982,453'Semicondutor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereof'20066,982,444'Ferroelectric memory device having a hydrogen barrier film'20066,972,990'Ferro-electric memory device and method of manufacturing the same'20056,855,565'Semiconductor device having ferroelectric film and manufacturing method thereof'20056,847,073'Semiconductor device using ferroelectric film in cell capacitor, and method for fabricating the same'20056,762,065'Semiconductor device having ferroelectric capacitor and method for manufacturing the same'20046,750,093'Semiconductor integrated circuit and method for manufacturing the same'20046,699,726'Semiconductor device and method for the manufacture thereof'20046,680,499'Semiconductor device and method of manufacturing the same'20046,677,630'Semiconductor device having ferroelectric film and manufacturing method thereof'20046,642,563'Semiconductor memory including ferroelectric gate capacitor structure, and method of fabricating the same'20036,611,015'Semiconductor device including dummy upper electrode'20036,611,014'Semiconductor device having ferroelectric capacitor and hydrogen barrier film and manufacturing method thereof'20036,603,161'Semiconductor device having ferroelectric capacitor and method for manufacturing the same'20036,586,790'Semiconductor device and method for manufacturing the same'20036,521,927'Semiconductor device and method for the manufacture thereof'20036,511,877'Semiconductor integrated circuit and method for manufacturing the same'20036,303,958'Semiconductor integrated circuit and method for manufacturing the same'20016,190,957'Method of forming a ferroelectric device'20015,990,507'Semiconductor device having ferroelectric capacitor structures'19995,818,869'Spread spectrum communication synchronizing method and its circuit'19985,757,870'Spread spectrum communication synchronizing method and its circuit'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2015Based in Yokohama, JP· patent location history
1999–2016Patents assigned to TOSHIBA KK (49)· patent assignee history
2003–2015Based in Kanagawa, JP· patent location history
2004–2005Patents assigned to INFINEON TECHNOLOGIES AG (2)· patent assignee history
2011–2016Patents assigned to KANAYA HIROYUKI (8)· patent assignee history
2013–2014Patents assigned to HOSOTANI KEIJI (2)· patent assignee history
2015–2018Based in Seoul, KR· patent location history
2018Patents assigned to TOSHIBA MEMORY CORP (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 49 | 1999–2016 |
| KANAYA HIROYUKIself | 8 | 2011–2016 |
| TOSHIBA MEMORY CORP | 3 | 2018 |
| HOSOTANI KEIJI | 2 | 2013–2014 |
| INFINEON TECHNOLOGIES AG | 2 | 2004–2005 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yokohama, JP | 41 | 1998–2015 |
| Kanagawa, JP | 9 | 2003–2015 |
| Seoul, KR | 6 | 2015–2018 |