Inventor

Makoto Morioka

Inventor

Tokyo, JP

Overview

14→

Patents

1976–1990

Patent span

Electricity

Primary field (CPC H)

Patents· 14 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Hprimary

H10HInorganic light-emitting semiconductor devices having potential barriers22%

C30BSingle-crystal growth13%

H10DInorganic electric semiconductor devices13%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%

G02BOptical elements, systems or apparatus9%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation9%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests9%

B60CVehicle tyres4%

H04BTransmission4%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%

PatentTitleYear

4,914,488'Compound semiconductor structure and process for making same'1990 4,835,583'Semiconductor device having strained superlattice buffer layers with In-doped GaAs substrate'1989 4,740,819'Photo semiconductor device'1988 4,673,959'Heterojunction FET with doubly-doped channel'1987 4,672,406'Semiconductor member and semiconductor device employing the same'1987 4,367,483'Optical semiconductor device'1983 4,212,021'Light emitting devices'1980 4,183,039'Light emitting semiconductor device'1980 4,122,486'Semiconductor light-emitting element'1978 4,032,945'Light emitting semiconductor diode'1977 4,017,881'Light emitting semiconductor device and a method for making the same'1977 4,016,829'Apparatus for crystal growth'1977 3,981,764'III-V Compound semi-conductor crystal growth from a liquid phase on a substract including filtering liquid phase'1976 3,960,618'Epitaxial growth process for compound semiconductor crystals in liquid phase'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1976–1990Patents assigned to HITACHI LTD (14)· patent assignee history

1976–1990Based in Tokyo, JP· patent location history

1977Based in Honde, JA· patent location history

1987–1989Based in Nishitama-gun, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
HITACHI LTD	14	1976–1990

Locations

Location	Patents	Span
Tokyo, JP	9	1976–1990
Nishitama-gun, JP	4	1987–1989
Honde, JA	1	1977