Inventor
Michael Heuken
Inventor
Aachen, DE
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth36%
H10HInorganic light-emitting semiconductor devices having potential barriers27%
C23CCoating metallic material18%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light9%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
PatentTitleYear
8,624,292'Non-polar semiconductor light emission devices'20148,217,418'Semi-polar semiconductor light emission devices'20127,473,316'Method of growing nitrogenous semiconductor crystal materials'20097,135,073'Method and system for semiconductor crystal production with temperature management'20067,128,785'Method for depositing especially crystalline layers from the gas phase onto especially crystalline substrates'20066,964,876'Method and device for depositing layers'20055,772,759'Process for producing p-type doped layers, in particular, in II-VI semiconductors'1998Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1998–2014Based in Aachen, DE· patent location history
2005–2009Patents assigned to AIXTRON AG (4)· patent assignee history
2012–2014Patents assigned to CHEN JAY (2)· patent assignee history
2012–2014Patents assigned to HEUKEN MICHAEL (2)· patent assignee history
2012–2014Patents assigned to PAN SHAOHER X (2)· patent assignee history
2012–2014Patents assigned to SIPHOTON INC (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AIXTRON AG | 4 | 2005–2009 |
| CHEN JAY | 2 | 2012–2014 |
| HEUKEN MICHAELself | 2 | 2012–2014 |
| PAN SHAOHER X | 2 | 2012–2014 |
| SIPHOTON INC | 2 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Aachen, DE | 7 | 1998–2014 |