Inventor
Hun Woo Kye
Inventor
Kyonggi-do, KR
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores96%
H10BElectronic memory devices4%
PatentTitleYear
8,059,451'Multiple valued dynamic random access memory cell and thereof array using single electron transistor'20118,031,512'Multiple-valued DRAM'20117,668,011'Serial flash memory device and precharging method thereof'20106,906,975'Reference voltage generating circuit of nonvolatile ferroelectric memory device'20056,879,510'Nonvolatile ferroelectric memory device and method for operating the same'20056,868,003'Magnetic random access memory'20056,845,031'Nonvolatile ferroelectric memory device and method for driving the same'20056,845,030'Nonvolatile ferroelectric memory device and method of fabricating the same'20056,836,425'CODING CELL OF NONVOLATILE FERROELECTRIC MEMORY DEVICE AND OPERATING METHOD THEREOF, AND COLUMN REPAIR CIRCUIT OF NONVOLATILE FERROELECTRIC MEMORY DEVICE HAVING THE CODING CELL AND METHOD FOR REPAIRING COLUMN'20046,791,861'Ferroelectric memory device and a method for driving the same'20046,775,172'Nonvolatile ferroelectric memory and method for driving the same'20046,754,096'Apparatus and method for driving ferroelectric memory'20046,751,137'Column repair circuit in ferroelectric memory'20046,700,812'Nonvolatile ferroelectric memory device and method for driving the same'20046,687,173'Circuit for testing ferroelectric capacitor in FRAM'20046,654,274'Ferroelectric memory and method for driving the same'20036,639,857'CODING CELL OF NONVOLATILE FERROELECTRIC MEMORY DEVICE AND OPERATING METHOD THEREOF, AND COLUMN REPAIR CIRCUIT OF NONVOLATILE FERROELECTRIC MEMORY DEVICE HAVING THE CODING CELL AND METHOD FOR REPAIRING COLUMN'20036,600,675'Reference circuit in ferroelectric memory and method for driving the same'20036,597,608'CODING CELL OF NONVOLATILE FERROELECTRIC MEMORY DEVICE AND OPERATING METHOD THEREOF, AND COLUMN REPAIR CIRCUIT OF NONVOLATILE FERROELECTRIC MEMORY DEVICE HAVING THE CODING CELL AND METHOD FOR REPAIRING COLUMN'20036,498,745'Circuit for generating timing of reference plate line in nonvolatile ferroelectric memory device and method for driving reference cell'20026,490,189'Boost voltage generating circuit for nonvolatile ferroelectric memory device and method for generating boost voltage'20026,483,738'Method for driving nonvolatile ferroelectric memory device'20026,480,410'Nonvolatile ferroelectric memory device and method for driving the same'20026,288,931'Ferroelectric memory device having cell groups containing capacitors commonly coupled to transistor'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001Patents assigned to HYUNDAI ELECTRONICS IND (1)· patent assignee history
2001–2004Based in Ichon-shi, KR· patent location history
2002–2005Patents assigned to HYNIX SEMICONDUCTOR INC (20)· patent assignee history
2002–2005Based in Kyonggi-do, KR· patent location history
2002–2005Based in Kyungki-do, KR· patent location history
2010Patents assigned to EXCEL SEMICONDUCTOR INC (1)· patent assignee history
2010–2011Based in Icheon-si, KR· patent location history
2011Patents assigned to CHOI JUNG BUM (1)· patent assignee history
2011Patents assigned to KYE HUN WOO (1)· patent assignee history
2011Based in Yongin-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HYNIX SEMICONDUCTOR INC | 20 | 2002–2005 |
| CHOI JUNG BUM | 1 | 2011 |
| EXCEL SEMICONDUCTOR INC | 1 | 2010 |
| HYUNDAI ELECTRONICS IND | 1 | 2001 |
| KYE HUN WOOself | 1 | 2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kyonggi-do, KR | 14 | 2002–2005 |
| Ichon-shi, KR | 4 | 2001–2004 |
| Kyungki-do, KR | 3 | 2002–2005 |
| Icheon-si, KR | 2 | 2010–2011 |
| Yongin-si, KR | 1 | 2011 |