LexDanaLexDanabeta
Inventor

Kazuya Yonemoto

Inventor
Tokyo, JP

Overview

69→
Patents
1988–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 69 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H04Nprimary
H04NPictorial communication, e.g. television43%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation41%
H10DInorganic electric semiconductor devices6%
H01LSemiconductor devices4%
G02BOptical elements, systems or apparatus2%
G11CStatic stores2%
G01BMeasuring length, thickness or similar linear dimensions1%
G06TImage data processing or generation, in general1%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
9,445,020'Solid-state imaging element having image signal overflow path'20169,313,430'Solid-state imaging element having image signal overflow path'20169,253,422'Solid-state imaging element having image signal overflow path'20169,179,081'Solid-state imaging element having image signal overflow path'20158,922,689'Solid-state imaging element having image signal overflow path'20148,743,257'Solid-state imaging element having image signal overflow path'20148,384,818'Solid-state imaging device including arrays of optical elements and photosensitive cells'20138,314,872'Imaging device'20128,300,130'Method of driving solid-state imaging device'20128,294,076'Imaging device with columnar or plate-like transparent refractive index layers'20128,289,422'Image capture device'20128,284,284'Solid-state imaging element, method for driving the same, and camera system'20128,208,052'Image capture device'20128,031,248'Solid state imaging element having horizontal scanning circuit for providing reset signals'20118,023,024'Solid-state imaging element having image signal overflow path'20117,944,491'Solid-state image-pickup device including unit pixels having a 3-transistor design and wherein a vertical selection pulse provides a reset potential'20117,755,690'Solid state image sensor with fixed pattern noise reduction'20107,719,594'Solid-state imaging device with OB region and camera provided with the same'20107,683,956'Solid-state imaging device, driving method thereof, and camera that separate image component signal and non-image component signal'20107,636,118'Solid state image sensor with fixed pattern noise reduction'20097,471,325'Scanning switch transistor for solid-state imaging device'20087,471,326'Scanning switch transistor for solid-state imaging device'20087,414,663'Imaging element, imaging device, camera module and camera system'20087,408,539'Solid-state imaging apparatus and sampling circuit'20087,375,757'Imaging element, imaging device, camera module and camera system'20087,352,401'Solid-state imaging element, method for driving the same, and camera system'20087,116,365'Solid-state imaging element, method for driving the same, and camera system'20067,113,212'Solid state imaging device, signal processing method and driving method therefor and camera'20067,091,978'Processing apparatus and photographing device'20066,980,244'Solid state image pickup device, driving method thereof and camera'20056,975,357'Solid-state imaging pickup device with vertical and horizontal driving means for a unit pixel'20056,873,362'Scanning switch transistor for solid-state imaging device'20056,842,192'Solid state image pickup device having an amplifier for each vertical signal line and driving method therefor'20056,801,253'Solid-state image sensor and method of driving same'20046,798,451'Solid-state image pickup device and method for driving the same'20046,677,993'Solid state image sensor with fixed pattern noise reduction'20046,483,541'Solid state imaging device, signal processing method and driving method therefor and camera'20026,441,851'Solid state image pickup device, signal processing method and camera therefor'20026,366,321'Solid state imaging device having a reset switch for resetting potential of capacitor and vertical signal line'20026,339,215'Solid state image sensing device and image signal processing method of the same'20026,166,769'Solid-state imaging device'20006,061,093'Solid-state imager having capacitors connected to vertical signal lines and a charge detection circuit'20006,037,979'Solid-state imaging device having a reset switch for resetting potential of capacitor and vertical signal line'20005,932,902'Solid-state imaging device with element-separating electrodes'19995,894,325'Solid image pickup unit and video camera employing same'19995,869,352'Method of manufacturing an amplifying solid-state imaging device'19995,825,056'Scanning switch transistor for solid state imaging device'19985,808,677'Solid-state imaging device having a reset switch for resetting potential of capacitor'19985,808,333'Amplifying type solid-state imaging device and method of manufacturing the same'19985,796,431'Solid-state image pickup device and driving method thereof'19985,717,458'Solid-state imager having capacitors connected to vertical signal lines and a charge detection circuit'19985,684,312'Solid-state imaging device having contact buffer layer interconnecting gate and vertical scan line'19975,506,434'Solid-state imaging device having contact buffer layer interconnecting gate and vertical scan line'19965,473,183'Semiconductor device of a first conductivity type which has a first well of a second conductivity type formed therein and a second well of the first conductivity type formed in the first well and a pair of MOSFET formed in the first and second wells'19955,434,619'Solid-state imaging device imaging device having noise cancellation and an output pixel signal'19955,306,926'CCD solid state imager'19945,298,778'Solid state image pickup device'19945,293,237'CCD image sensing device having a p-well region with a high impurity concentration'19945,286,989'Solid state imaging device'19945,270,531'Source follower circuit for image sensor'19935,250,825'Smear supressing CCD imager'19935,237,191'Solid-state charge-coupled-device imager'19935,233,430'Solid state imager wherein the horizontal transfer is accomplished with first and second clock voltages and the cross-over point between the voltages is above the medium level between the peak values of the voltages'19935,216,489'Solid state image sensor'19935,202,907'Solid-state image sensor output MOSFET amplifier with MOSFET load'19935,194,751'Structure of solid-state image sensing devices'19935,182,622'Charge coupled device imager having multichannel readout structure'19934,875,100'Electronic shutter for a CCD image sensor'19894,780,765'Solid state image pick-up device'1988

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1988–2016Patents assigned to SONY CORP (60)· patent assignee history
1988–2008Based in Kanagawa, JP· patent location history
1993–2016Based in Tokyo, JP· patent location history
2008Based in Suita, JP· patent location history
2010–2013Patents assigned to PANASONIC CORP (8)· patent assignee history
2010–2013Based in Osaka, JP· patent location history
2012–2014Patents assigned to YONEMOTO KAZUYA (9)· patent assignee history
2012–2013Patents assigned to HIRAMOTO MASAO (5)· patent assignee history
2012–2013Patents assigned to SUGITANI YOSHIAKI (4)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SONY CORP601988–2016
YONEMOTO KAZUYAself92012–2014
PANASONIC CORP82010–2013
HIRAMOTO MASAO52012–2013
SUGITANI YOSHIAKI42012–2013
Locations
LocationPatentsSpan
Tokyo, JP541993–2016
Osaka, JP82010–2013
Kanagawa, JP61988–2008
Suita, JP12008