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Inventor

Shih-Shiung Chen

Inventor
Tainan, TW

Overview

3→
Patents
1994–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices22%
H10DInorganic electric semiconductor devices22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%
G06FElectric digital data processing11%
PatentTitleYear
11,121,098Trap layer substrate stacking technique to improve performance for RF devices202111,121,100Trap layer substrate stacking technique to improve performance for RF devices20215,313,587'Device for simultaneous data input/output and execution support in digital processors'1994

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1994Patents assigned to HITACHI MICRO SYSTEMS INC (1)· patent assignee history
1994Based in Palo Alto, CA, US· patent location history
2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (2)· patent assignee history
2021Based in Tainan, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TAIWAN SEMICONDUCTOR MFG CO LTD22021
HITACHI MICRO SYSTEMS INC11994
Locations
LocationPatentsSpan
Tainan, TW22021
Palo Alto, California, US11994