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Inventor

Martin Commons

Inventor
Stormville, NY, US

Overview

3→
Patents
2002–2005
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary
H10BElectronic memory devices33%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices17%
H10DInorganic electric semiconductor devices17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
PatentTitleYear
6,849,495'Selective silicidation scheme for memory devices'20056,566,227'Strap resistance using selective oxidation to cap DT poly before STI etch'20036,440,759'Method of measuring combined critical dimension and overlay in single step'2002

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2002–2005Patents assigned to INFINEON TECHNOLOGIES AG (3)· patent assignee history
2002–2003Based in Stormville, NY, US· patent location history
2005Based in Glen Allen, VA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
INFINEON TECHNOLOGIES AG32002–2005
Locations
LocationPatentsSpan
Stormville, New York, US22002–2003
Glen Allen, Virginia, US12005