Inventor

Ralph A. Logan

Inventor
Morristown, NJ, US

Overview

21→
Patents
1976–1991
Patent span
Electricity
Primary field (CPC H)

Patents· 21 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light35%
H10HInorganic light-emitting semiconductor devices having potential barriers18%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests12%
G02BOptical elements, systems or apparatus6%
B82YSpecific uses or applications of nanostructures4%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein4%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
C30BSingle-crystal growth2%
PatentTitleYear
5,040,186'InP-based quantum-well laser'19914,953,170'Method for forming a heteroepitaxial structure, and a device manufactured thereby'19904,701,995'Method of making a nonplanar buried-heterostructure distributed-feedback laser'19874,627,065'Double active layer semiconductor laser'19864,575,919'Method of making heteroepitaxial ridge overgrown laser'19864,536,940'Method of making a loss stabilized buried heterostructure laser'19854,481,631'Loss stabilized buried heterostructure laser'19844,464,211'Method for selective area growth by liquid phase epitaxy'19844,390,889'Photodiode having an InGaAs layer with an adjacent InGaAsP p-n junction'19834,269,635'Strip buried heterostructure laser'19814,226,667'Oxide masking of gallium arsenide'19804,194,933'Method for fabricating junction lasers having lateral current confinement'19804,190,813'Strip buried heterostructure laser'19804,169,997'Lateral current confinement in junction lasers'19794,159,452'Dual beam double cavity heterostructure laser with branching output waveguides'19794,136,928'Optical integrated circuit including junction laser with oblique mirror'19794,093,345'Semiconductor rib waveguide optical modulator with heterojunction control electrode cladding'19784,028,146'LPE Technique for fabricating tapered optical couplers'19773,993,963'Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same'19763,978,426'Heterostructure devices including tapered optical couplers'19763,935,472'Thin film liquid waveguide optical converter'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1976–1983Patents assigned to BELL TELEPHONE LABOR INC (13)· patent assignee history
1976–1991Based in Morristown, NJ, US· patent location history
1984–1991Patents assigned to AT & T BELL LAB (7)· patent assignee history
1987Patents assigned to AMERICAN TELEPHONE & TELEGRAPH (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
BELL TELEPHONE LABOR INC131976–1983
AT & T BELL LAB71984–1991
AMERICAN TELEPHONE & TELEGRAPH11987
Locations
LocationPatentsSpan
Morristown, New Jersey, US211976–1991