Inventor
Te-An Chen
Inventor
TW
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices30%
H01LSemiconductor devices29%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
B82YSpecific uses or applications of nanostructures4%
H10BElectronic memory devices4%
PatentTitleYear
12,490,510Semiconductor device and method of forming the same202512,484,288Semiconductor device with first and second source/drain epitaxial layers202512,363,925Schottky barrier diode with reduced leakage current and method of forming the same202512,308,279Semiconductor device including an isolation region having an edge being covered and manufacturing method for the same202512,261,175Method for forming integrated circuit202512,132,094Semiconductor device including strained transistor and method for manufacturing the same202412,114,496Semiconductor device and manufacturing method thereof202412,087,809Semiconductor device having capacitor and manufacturing method thereof202411,984,490Schottky barrier diode with reduced leakage current and method of forming the same202411,935,791Semiconductor devices having controlled S/D epitaxial shape202411,916,079Semiconductor structure202411,894,273Methods of forming a semiconductor device202411,854,863Semiconductor device including an isolation region having an edge being covered and manufacturing method for the same202311,855,080Semiconductor device and method of fabricating the same202311,799,006Mask-free process for improving drain to gate breakdown voltage in semiconductor devices202311,778,815Semiconductor device and manufacturing method thereof202311,569,267Method for forming integrated circuit202311,532,694Semiconductor device having capacitor and manufacturing method thereof202211,515,212Method of manufacturing semiconductor devices having controlled S/D epitaxial shape202211,508,816Semiconductor structure and method of forming the same202211,450,660Semiconductor device and method of fabricating the same202211,404,410Semiconductor device having different voltage regions202211,355,507Semiconductor device and manufacturing method thereof202211,349,010Schottky barrier diode with reduced leakage current and method of forming the same2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2025Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (24)· patent assignee history
2022–2025Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 24 | 2022–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 24 | 2022–2025 |