Inventor
Xing Zhang
Inventor
Beijing, CN
Overview
Patents· 26 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices27%
H10DInorganic electric semiconductor devices27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%
H10KOrganic electric solid-state devices4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
G01RMeasuring electric variables3%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems3%
Y02BClimate change mitigation technologies related to buildings, e.g. housing, house appliances or related end-user applications3%
B01DSeparation1%
C02FTreatment of water, waste water, sewage, or sludge1%
PatentTitleYear
10,868,190Top-gate thin film transistor, manufacturing method thereof, array substrate and display panel comprising top-gate thin film transistor202010,734,613Method for manufacturing OLED substrate202010,700,173FinFET device with a wrap-around silicide source/drain contact structure202010,643,900Method to reduce FinFET short channel gate height202010,636,850Electroluminescent device and method for manufacturing the same and display device202010,325,824Methods, apparatus and system for threshold voltage control in FinFET devices201910,294,129Polymeric-metal composite electrode-based electrochemical device for generating oxidants201910,083,873Semiconductor structure with uniform gate heights201810,043,713Method to reduce FinFET short channel gate height20189,899,910'Bridgeless PFC power converter with reduced EMI noise'20189,673,730'Double auxiliary resonant commutated pole three-phase soft-switching inverter circuit and modulation method'20179,508,852'Radiation-hardened-by-design (RHBD) multi-gate device'20169,484,208'Preparation method of a germanium-based schottky junction'20169,312,126'Method for processing gate dielectric layer deposited on germanium-based or group III-V compound-based substrate'20169,255,960'Testing structure and method for interface trap density of gate oxide'20169,252,238'Semiconductor structures with coplanar recessed gate layers and fabrication methods'20169,147,597'Method for isolating active regions in germanium-based MOS device'20159,086,448'Method for predicting reliable lifetime of SOI mosfet device'20158,987,083'Uniform gate height for semiconductor structure with N and P type fins'20158,877,594'CMOS device for reducing radiation-induced charge collection and method for fabricating the same'20148,865,543'Ge-based NMOS device and method for fabricating the same'20148,673,722'Strained channel field effect transistor and the method for fabricating the same'20148,652,929'CMOS device for reducing charge sharing effect and fabrication method thereof'20148,632,691'Interface treatment method for germanium-based device'20148,541,847'Semiconductor device and method for fabricating the same'20138,450,155'Method for introducing channel stress and field effect transistor fabricated by the same'2013Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2013–2016Patents assigned to UNIV BEIJING (13)· patent assignee history
2013–2015Patents assigned to AN XIA (9)· patent assignee history
2013–2015Patents assigned to HUANG RU (9)· patent assignee history
2013–2015Patents assigned to ZHANG XING (9)· patent assignee history
2013–2020Based in Beijing, CN· patent location history
2015–2020Patents assigned to GLOBALFOUNDRIES INC (7)· patent assignee history
2015–2016Based in Ballston Lake, NY, US· patent location history
2018–2020Based in Clifton Park, NY, US· patent location history
2019Based in Beacon, NY, US· patent location history
2019Based in Shanghai, CN· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV BEIJING | 13 | 2013–2016 |
| AN XIA | 9 | 2013–2015 |
| HUANG RU | 9 | 2013–2015 |
| ZHANG XINGself | 9 | 2013–2015 |
| GLOBALFOUNDRIES INC | 7 | 2015–2020 |
Locations
| Location | Patents | Span |
|---|---|---|
| Beijing, CN | 16 | 2013–2020 |
| Clifton Park, New York, US | 4 | 2018–2020 |
| Ballston Lake, New York, US | 2 | 2015–2016 |
| Beacon, New York, US | 1 | 2019 |
| Shanghai, CN | 1 | 2019 |