Inventor
Jeffrey S. Flynn
Inventor
Litchfield, CT, US
Overview
Patents· 16 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1027%
C30BSingle-crystal growth25%
H10DInorganic electric semiconductor devices18%
H10HInorganic light-emitting semiconductor devices having potential barriers16%
Y10TTechnical subjects covered by former us classification8%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light4%
B82YSpecific uses or applications of nanostructures2%
PatentTitleYear
8,698,286'High voltage switching devices and process for forming same'20148,390,101'High voltage switching devices and process for forming same'20138,212,259'III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates'20128,174,089'High voltage switching devices and process for forming same'20128,043,731'Vicinal gallium nitride substrate for high quality homoepitaxy'20117,919,791'Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same'20117,915,152'III-V nitride substrate boule and method of making and using the same'20117,795,707'High voltage switching devices and process for forming same'20107,700,203'Vicinal gallium nitride substrate for high quality homoepitaxy'20107,655,197'III-V nitride substrate boule and method of making and using the same'20107,390,581'Vicinal gallium nitride substrate for high quality homoepitaxy'20087,282,744'III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier'20077,118,813'Vicinal gallium nitride substrate for high quality homoepitaxy'20066,596,079'III-V nitride substrate boule and method of making and using the same'20036,533,874'GaN-based devices using thick (Ga, Al, In)N base layers'20036,447,604'METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((AL,IN,GA)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2003Patents assigned to ADVANCED TECH MATERIALS (3)· patent assignee history
2002–2012Based in Litchfield, CT, US· patent location history
2003Based in Wolcott, CT, US· patent location history
2006–2014Patents assigned to CREE INC (13)· patent assignee history
2010–2014Based in Wake Forest, NC, US· patent location history
2010Based in Raleigh, NC, US· patent location history
2012–2013Patents assigned to BRANDES GEORGE R (3)· patent assignee history
2012–2013Patents assigned to FLYNN JEFFREY S (3)· patent assignee history
2012–2013Patents assigned to VAUDO ROBERT P (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CREE INC | 13 | 2006–2014 |
| ADVANCED TECH MATERIALS | 3 | 2002–2003 |
| BRANDES GEORGE R | 3 | 2012–2013 |
| FLYNN JEFFREY Sself | 3 | 2012–2013 |
| VAUDO ROBERT P | 3 | 2012–2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Litchfield, CT, US | 8 | 2002–2012 |
| Wake Forest, NC, US | 6 | 2010–2014 |
| Raleigh, NC, US | 1 | 2010 |
| Wolcott, CT, US | 1 | 2003 |