Inventor
Leonard C. Feldman
Inventor
Berkeley Heights, NJ, US
Overview
Patents· 21 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H10DInorganic electric semiconductor devices19%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests12%
A61BDiagnosis6%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light6%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h106%
H01LSemiconductor devices4%
A01NPreservation of bodies of humans or animals or plants or parts thereof2%
A61KPreparations for medical, dental or toiletry purposes2%
A61QSpecific use of cosmetics or similar toiletry preparations2%
PatentTitleYear
9,362,367'Semiconductor devices including polar insulation layer capped by non-polar insulation layer'20169,117,817'Semiconductor devices including polar insulation layer capped by non-polar insulation layer'20157,891,875'Tear-resistive container for dispensing materials'20117,727,340'Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects'20107,235,438'Inclusion of nitrogen at the silicon dioxide-silicon carbide interface for passivation of interface defects'20076,939,756'Inclusion of nitrogen at the silicon dioxide-silicon carbide interace for passivation of interface defects'20056,572,580'Set depth nail notcher with patch system and method for treating nail fungus'20036,287,276'Set depth nail notcher and method for treating nail fungus'20016,264,628'Set depth nail notcher and method for treating nail fungus'20015,904,523'Process for device fabrication in which a layer of oxynitride is formed at low temperatures'1999D0396550'Pair of metatarsal pads'19985,532,510'Reverse side etching for producing layers with strain variation'19965,500,391'Method for making a semiconductor device including diffusion control'19965,334,306'Metallized paths on diamond surfaces'19945,308,796'Fabrication of electronic devices by electroless plating of copper onto a metal silicide'19945,249,195'Erbium doped optical devices'19935,068,868'Vertical cavity surface emitting lasers with electrically conducting mirrors'19914,861,393'Semiconductor heterostructures having Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy'1989H0000147'High resistivity group III-V compounds by helium bombardment'19864,529,455'Method for epitaxially growing Ge.sub.x Si.sub.1-x layers on Si utilizing molecular beam epitaxy'19854,393,311'Method and apparatus for surface characterization and process control utilizing radiation from desorbed particles'1983Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1983–1996Based in Berkeley Heights, NJ, US· patent location history
1985–1994Patents assigned to AT & T BELL LAB (5)· patent assignee history
1996Patents assigned to AT & T CORP (2)· patent assignee history
1998–2003Based in Brooklyn, NY, US· patent location history
1999–2010Based in Nashville, TN, US· patent location history
2001–2003Patents assigned to PROFOOT INC (3)· patent assignee history
2005–2016Patents assigned to UNIV AUBURN (5)· patent assignee history
2011Based in Fort Lauderdale, FL, US· patent location history
2015–2016Patents assigned to UNIV RUTGERS (2)· patent assignee history
2015–2016Based in New Brunswick, NJ, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| AT & T BELL LAB | 5 | 1985–1994 |
| UNIV AUBURN | 5 | 2005–2016 |
| PROFOOT INC | 3 | 2001–2003 |
| AT & T CORP | 2 | 1996 |
| UNIV RUTGERS | 2 | 2015–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| Berkeley Heights, New Jersey, US | 10 | 1983–1996 |
| Nashville, TN, US | 4 | 1999–2010 |
| Brooklyn, New York, US | 4 | 1998–2003 |
| New Brunswick, New Jersey, US | 2 | 2015–2016 |
| Fort Lauderdale, Florida, US | 1 | 2011 |