Inventor

Hideki Horii

Inventor

Seoul, KR

Overview

1999–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 59 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Nprimary

H10NElectric solid-state devices not otherwise provided for24%

H10BElectronic memory devices23%

G11CStatic stores11%

H01LSemiconductor devices10%

H10DInorganic electric semiconductor devices7%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%

G06FElectric digital data processing4%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%

H04LTransmission of digital information, e.g. telegraphic communication2%

PatentTitleYear

11,005,925Load balancing with power of random choices2021 10,977,087Steal one-process many work-stealing2021 10,970,311Scalable snapshot isolation on non-transactional NoSQL2021 10,934,686Working machine2021 10,937,284Somatosensory feedback system2021 10,929,054Scalable garbage collection2021 10,896,169Distributed system, computer program product and method2021 10,896,165Management of snapshot in blockchain2021 10,896,166Management of snapshot in blockchain2021 10,889,963Working machine2021 10,714,685Methods of forming semiconductor devices having threshold switching devices2020 10,636,968Variable resistance memory device and method of manufacturing the same2020 10,546,894Memory device2020 10,468,594Variable resistance memory devices2019 10,403,818Method of forming semiconductor devices having threshold switching devices2019 10,403,681Memory device including a variable resistance material layer2019 10,388,867Variable resistance memory devices2019 10,236,444Variable resistance memory device and method of manufacturing the same2019 10,224,371Memory device2019 10,186,552Variable resistance memory device and method of manufacturing the same2019 9,893,281'Semiconductor device and method of fabricating the same'2018 9,520,556'Semiconductor device and method of fabricating the same'2016 9,318,700'Method of manufacturing a phase change memory device'2016 8,962,438'Variable resistance memory device and method of forming the same'2015 8,871,559'Methods for fabricating phase change memory devices'2014 8,735,215'Method of manufacturing variable resistance memory device'2014 8,581,612'Probe card and test apparatus including the same'2013 8,580,606'Method of forming resistance variable memory device'2013 8,552,412'Variable resistance memory device and method of forming the same'2013 8,299,450'Non-volatile memory device including phase-change material'2012 8,238,147'Multi-level phase change memory device, program method thereof, and method and system including the same'2012 8,222,625'Non-volatile memory device including phase-change material'2012 8,039,298'Phase changeable memory cell array region and method of forming the same'2011 7,800,095'Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory'2010 7,787,278'Resistance variable memory device and operating method thereof'2010 7,777,212'Phase change memory devices including carbon-containing adhesive pattern'2010 7,778,066'Resistance variable memory device and programming method thereof'2010 7,767,491'Methods of manufacturing semiconductor device'2010 7,767,568'Phase change memory device and method of fabricating the same'2010 7,763,878'Phase changeable memory device structures'2010 7,638,788'Phase change memory device and method of forming the same'2009 7,638,787'Phase changeable memory cell array region and method of forming the same'2009 7,605,087'Methods of forming semiconductor devices using di-block polymer layers'2009 7,575,776'Reflowing of a phase changeable memory element to close voids therein'2009 7,569,430'Phase changeable structure and method of forming the same'2009 7,558,100'Phase change memory devices including memory cells having different phase change materials and related methods and systems'2009 7,498,064'Laser reflowing of phase changeable memory element to close a void therein'2009 7,495,456'System and method of determining pulse properties of semiconductor device'2009 7,397,092'Phase changable memory device structures'2008 7,247,897'Conductive line for a semiconductor device using a carbon nanotube including a memory thin film and semiconductor device manufactured'2007 7,060,543'Method of forming a conductive line for a semiconductor device using a carbon nanotube and semiconductor device manufactured using the method'2006 7,037,762'Phase changeable memory devices having multi-level data storage elements and methods of fabricating the same'2006 7,037,749'Methods for forming phase changeable memory devices'2006 7,038,261'Integrated circuit memory devices having memory cells therein that utilize phase-change materials to support non-volatile data retention'2006 6,630,387'Method for forming capacitor of semiconductor memory device using electroplating method'2003 6,596,149'Manufacturing method for capacitor having electrode formed by electroplating'2003 6,255,187'Method of fabricating self-aligning stacked capacitor using electroplating method'2001 6,177,284'Conductive diffusion barrier layer, semiconductor device having the same, and manufacturing thereof'2001 5,877,062'Methods of forming integrated circuit capacitors having protected diffusion barrier metal layers therein'1999

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1999–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (49)· patent assignee history

1999–2003Based in Kyungki-do, KR· patent location history

2006–2020Based in Seoul, KR· patent location history

2006Based in Gyeonggi-do, KR· patent location history

2012–2014Patents assigned to HORII HIDEKI (8)· patent assignee history

2012Patents assigned to AHN DONG-HO (2)· patent assignee history

2012Patents assigned to KIM YOUNG-HYUN (2)· patent assignee history

2021Patents assigned to IBM (7)· patent assignee history

2021Based in Tokyo, JP· patent location history

2021Based in Sakai, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	49	1999–2020
HORII HIDEKIself	8	2012–2014
IBM	7	2021
AHN DONG-HO	2	2012
KIM YOUNG-HYUN	2	2012

Locations

Location	Patents	Span
Seoul, KR	41	2006–2020
Tokyo, JP	7	2021
Kyungki-do, KR	4	1999–2003
Sakai, JP	2	2021
Gyeonggi-do, KR	2	2006