Inventor
CÉDRIC OUVRARD
Inventor
DE
Overview
Patents· 5 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices50%
H10DInorganic electric semiconductor devices50%
PatentTitleYear
11,848,379MOSFET having a drift region with a graded doping profile and methods of manufacturing thereof202311,764,272Semiconductor device and method of manufacturing the same202311,462,620Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structures202211,296,218Semiconductor device202211,158,735Charge compensation MOSFET with graded epi profile and methods of manufacturing thereof2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2023Patents assigned to INFINEON TECHNOLOGIES AUSTRIA AG (5)· patent assignee history
2021–2023Based in DE· patent location history
2022Patents assigned to INFINEON TECHNOLOGIES AMERICAS CORP (1)· patent assignee history
2022Based in AT· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INFINEON TECHNOLOGIES AUSTRIA AG | 5 | 2021–2023 |
| INFINEON TECHNOLOGIES AMERICAS CORP | 1 | 2022 |
Locations
| Location | Patents | Span |
|---|---|---|
| DE | 4 | 2021–2023 |
| AT | 1 | 2022 |